Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDN339AN

FDN339AN

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,011 -

RFQ

FDN339AN

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 35mOhm @ 3A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V ±8V 700 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDB0260N1007L

FDB0260N1007L

MOSFET N-CH 100V 200A TO263-7

Fairchild Semiconductor
2,890 -

RFQ

FDB0260N1007L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 2.6mOhm @ 27A, 10V 4V @ 250µA 118 nC @ 10 V ±20V 8545 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQU12N20TU

FQU12N20TU

MOSFET N-CH 200V 9A I-PAK

Fairchild Semiconductor
3,817 -

RFQ

FQU12N20TU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 280mOhm @ 4.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 910 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD3680

FDD3680

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,507 -

RFQ

FDD3680

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Ta) 6V, 10V 46mOhm @ 6.1A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1735 pF @ 50 V - 68W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDP55N06

FDP55N06

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
3,663 -

RFQ

FDP55N06

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 22mOhm @ 27.5A, 10V 4V @ 250µA 37 nC @ 10 V ±25V 1510 pF @ 25 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF15N65

FDPF15N65

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,038 -

RFQ

FDPF15N65

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 440mOhm @ 7.5A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 3095 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
BS170-D26Z

BS170-D26Z

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,203 -

RFQ

BS170-D26Z

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 40 pF @ 10 V - 830mW (Ta) -55°C ~ 150°C (TJ) Through Hole
FCH067N65S3-F155

FCH067N65S3-F155

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,690 -

RFQ

FCH067N65S3-F155

Ficha técnica

Bulk SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 44A (Tc) 10V 67mOhm @ 22A, 10V 4.5V @ 4.4mA 78 nC @ 10 V ±30V 3090 pF @ 400 V Super Junction 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQU2N60CTU

FQU2N60CTU

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,784 -

RFQ

FQU2N60CTU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 1.9A (Tc) 10V 4.7Ohm @ 950mA, 10V 4V @ 250µA 12 nC @ 10 V ±30V 235 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD3670

FDD3670

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,669 -

RFQ

FDD3670

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 34A (Ta) 6V, 10V 32mOhm @ 7.3A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 2490 pF @ 50 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD850N10L

FDD850N10L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,996 -

RFQ

FDD850N10L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 15.7A (Tc) 5V, 10V 75mOhm @ 12A, 10V 2.5V @ 250µA 28.9 nC @ 10 V ±20V 1465 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFM120ATF

IRFM120ATF

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
3,973 -

RFQ

IRFM120ATF

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 2.3A (Ta) 10V 200mOhm @ 1.15A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 480 pF @ 25 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS7578

FDMS7578

MOSFET N-CH 25V 17A/28A 8PQFN

Fairchild Semiconductor
2,855 -

RFQ

FDMS7578

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 28A (Tc) 4.5V, 10V 5.8mOhm @ 17A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1625 pF @ 13 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDH50N50_F133

FDH50N50_F133

MOSFET N-CH 500V 48A TO247

Fairchild Semiconductor
2,969 -

RFQ

FDH50N50_F133

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) - 105mOhm @ 24A, 10V 5V @ 250µA 137 nC @ 10 V ±20V 6460 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF770N15A

FDPF770N15A

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,278 -

RFQ

FDPF770N15A

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 10A (Tc) 10V 77mOhm @ 10A, 10V 4V @ 250µA 11.2 nC @ 10 V ±20V 765 pF @ 75 V - 21W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMC2512SDC

FDMC2512SDC

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,500 -

RFQ

FDMC2512SDC

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 40A (Tc) 4.5V, 10V 2mOhm @ 27A, 10V 2.5V @ 1mA 68 nC @ 10 V ±20V 4410 pF @ 13 V - 3W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS0300S

FDMS0300S

MOSFET N-CH 30V 31A/49A 8PQFN

Fairchild Semiconductor
2,037 -

RFQ

FDMS0300S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 31A (Ta), 49A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 3V @ 1mA 133 nC @ 10 V ±20V 8705 pF @ 15 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDY100PZ

FDY100PZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,771 -

RFQ

FDY100PZ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V 1.5V @ 250µA 1.4 nC @ 4.5 V ±8V 100 pF @ 10 V - 625mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMA8051L

FDMA8051L

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,688 -

RFQ

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 1260 pF @ 20 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD5670

FDD5670

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,050 -

RFQ

FDD5670

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 52A (Ta) 6V, 10V 15mOhm @ 10A, 10V 4V @ 250µA 73 nC @ 10 V ±20V 2739 pF @ 15 V - 3.8W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 1812 Record«Prev1... 7980818283848586...91Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário