Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP61N20

FDP61N20

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
3,185 -

RFQ

FDP61N20

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 61A (Tc) 10V 41mOhm @ 30.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 3380 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDFM2N111

FDFM2N111

MOSFET N-CH 20V 4A MICROFET

Fairchild Semiconductor
2,487 -

RFQ

FDFM2N111

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 4A (Ta) 2.5V, 4.5V 100mOhm @ 4A, 4.5V 1.5V @ 250µA 3.8 nC @ 4.5 V ±12V 273 pF @ 10 V Schottky Diode (Isolated) 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP15P12

FQP15P12

MOSFET P-CH 120V 15A TO220-3

Fairchild Semiconductor
2,362 -

RFQ

FQP15P12

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 120 V 15A (Tc) 10V 200mOhm @ 7.5A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP44N10

FQP44N10

POWER MOSFET, N-CHANNEL, QFET, 1

Fairchild Semiconductor
2,351 -

RFQ

FQP44N10

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 43.5A (Tc) 10V 39mOhm @ 21.75A, 10V 4V @ 250µA 62 nC @ 10 V ±25V 1800 pF @ 25 V - 146W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD4243

FDD4243

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
2,189 -

RFQ

FDD4243

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 40 V 6.7A (Ta), 14A (Tc) 4.5V, 10V 44mOhm @ 6.7A, 10V 3V @ 250µA 29 nC @ 10 V ±20V 1550 pF @ 20 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP18N20F

FDP18N20F

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,725 -

RFQ

FDP18N20F

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 145mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1180 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS7698

FDMS7698

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,056 -

RFQ

FDMS7698

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 22A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 1605 pF @ 15 V - 2.5W (Ta), 29W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF27P06

FQPF27P06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,108 -

RFQ

FQPF27P06

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) - 70mOhm @ 8.5A, 10V 4V @ 250µA 43 nC @ 10 V ±25V 1400 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
MTD3055VL

MTD3055VL

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,520 -

RFQ

MTD3055VL

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 5V 180mOhm @ 6A, 5V 2V @ 250µA 10 nC @ 5 V ±20V 570 pF @ 25 V - 3.9W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDH047AN08A0

FDH047AN08A0

MOSFET N-CH 75V 15A TO247-3

Fairchild Semiconductor
3,553 -

RFQ

FDH047AN08A0

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 15A (Tc) 6V, 10V 4.7mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 6600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP20N06TSTU

FQP20N06TSTU

MOSFET N-CH 60V 20A TO220-3

Fairchild Semiconductor
3,819 -

RFQ

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 60mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76629D3STR4885

HUF76629D3STR4885

N-CHANNEL LOGIC LEVEL ULTRAFET P

Fairchild Semiconductor
2,930 -

RFQ

HUF76629D3STR4885

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 43 nC @ 10 V ±16V 1285 pF @ 25 V - 150W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FCH104N60

FCH104N60

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,674 -

RFQ

FCH104N60

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 104mOhm @ 18.5A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 4165 pF @ 380 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP099N60E

FCP099N60E

MOSFET N-CH 600V 37A TO220-3

Fairchild Semiconductor
2,521 -

RFQ

FCP099N60E

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 37A (Tc) 10V 99mOhm @ 18.5A, 10V 3.5V @ 250µA 114 nC @ 10 V ±20V 3465 pF @ 380 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS5680

FDS5680

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,349 -

RFQ

FDS5680

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta) 6V, 10V 20mOhm @ 8A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 1850 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQA90N15

FQA90N15

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor
3,938 -

RFQ

FQA90N15

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 150 V 90A (Tc) 10V 18mOhm @ 45A, 10V 4V @ 250µA 285 nC @ 10 V ±25V 8700 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMC7664

FDMC7664

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,701 -

RFQ

FDMC7664

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 18.8A (Ta), 24A (Tc) 4.5V, 10V 4.2mOhm @ 18.8A, 10V 3V @ 250µA 76 nC @ 10 V ±20V 4865 pF @ 15 V - 2.3W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS8433A

FDS8433A

MOSFET P-CH 20V 5A 8SOIC

Fairchild Semiconductor
3,691 -

RFQ

FDS8433A

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 2.5V, 4.5V 47mOhm @ 5A, 4.5V 1V @ 250µA 28 nC @ 5 V ±8V 1130 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS0302S

FDMS0302S

MOSFET N-CH 30V 29A/49A 8PQFN

Fairchild Semiconductor
2,352 -

RFQ

FDMS0302S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 29A (Ta), 49A (Tc) 4.5V, 10V 1.9mOhm @ 28A, 10V 3V @ 1mA 109 nC @ 10 V ±20V 7350 pF @ 15 V - 2.5W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP6N80C

FQP6N80C

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
2,373 -

RFQ

FQP6N80C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 2.5Ohm @ 2.75A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1310 pF @ 25 V - 158W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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