Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP032N08B

FDP032N08B

N-CHANNEL POWERTRENCH MOSFET 80V

Fairchild Semiconductor
3,432 -

RFQ

FDP032N08B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF76639S3ST-F085

HUF76639S3ST-F085

HUF76639 - N-CHANNEL LOGIC LEVEL

Fairchild Semiconductor
3,985 -

RFQ

HUF76639S3ST-F085

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 51A (Tc) 10V 26mOhm @ 51A, 10V 3V @ 250µA 86 nC @ 10 V ±16V 2400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP150N10A-F102

FDP150N10A-F102

N-CHANNEL POWERTRENCH MOSFET 100

Fairchild Semiconductor
3,980 -

RFQ

FDP150N10A-F102

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Tc) 10V 15mOhm @ 50A, 10V 4V @ 250µA 21 nC @ 10 V ±20V 1440 pF @ 50 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP46N30

FDP46N30

46A, 300V, 0.079OHM, N-CHANNEL M

Fairchild Semiconductor
3,585 -

RFQ

FDP46N30

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF634B-FP001

IRF634B-FP001

DISCRETE MOSFET

Fairchild Semiconductor
3,788 -

RFQ

IRF634B-FP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 4.05A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1000 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD20AN06A0-F085

FDD20AN06A0-F085

FDD20AN06 - N-CHANNEL POWERTRENC

Fairchild Semiconductor
2,518 -

RFQ

FDD20AN06A0-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Ta), 45A (Tc) 10V 20mOhm @ 45A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 950 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDB8832-F085

FDB8832-F085

FDB8832 - N-CHANNEL LOGIC LEVEL

Fairchild Semiconductor
3,938 -

RFQ

FDB8832-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 34A (Ta) 4.5V, 10V 1.9mOhm @ 80A, 10V 3V @ 250µA 265 nC @ 10 V ±20V 11400 pF @ 15 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS6898AZ-F085

FDS6898AZ-F085

FDS6898 - DUAL N-CHANNEL LOGIC L

Fairchild Semiconductor
2,617 -

RFQ

FDS6898AZ-F085

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDH047AN08AD

FDH047AN08AD

FDH047AN08A0 - 75V N-CHANNEL POW

Fairchild Semiconductor
2,003 -

RFQ

FDH047AN08AD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDC658AP-G

FDC658AP-G

FDC658AP - MOSFET 30V 50.0 MOHM

Fairchild Semiconductor
2,116 -

RFQ

FDC658AP-G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RFP12N10L

RFP12N10L

12A, 100V, 0.2OHM, N-CHANNEL, MO

Fairchild Semiconductor
2,513 -

RFQ

RFP12N10L

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMF6823

FDMF6823

FDMF6823 - PMIC - FULL, HALF-BRI

Fairchild Semiconductor
2,441 -

RFQ

FDMF6823

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NDS355AN-NB9L007A

NDS355AN-NB9L007A

NDS355AN - N-CHANNEL LOGIC LEVEL

Fairchild Semiconductor
2,170 -

RFQ

NDS355AN-NB9L007A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.7A (Ta) 4.5V, 10V 85mOhm @ 1.9A, 10V 2V @ 250µA 5 nC @ 5 V ±20V 195 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC8200

FDMC8200

FDMC8200 - DUAL N-CHANNEL POWERT

Fairchild Semiconductor
2,937 -

RFQ

FDMC8200

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMS8350LET40

FDMS8350LET40

FDMS8350LET40 - N-CHANNEL POWERT

Fairchild Semiconductor
2,233 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 49A (Ta), 300A (Tc) 4.5V, 10V 0.85mOhm @ 47A, 10V 3V @ 250µA 219 nC @ 10 V ±20V 16590 pF @ 20 V - 3.33W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS86104

FDMS86104

N-CHANNEL SHIELDED GATE POWERTRE

Fairchild Semiconductor
3,456 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7A (Ta), 16A (Tc) 6V, 10V 24mOhm @ 7A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 923 pF @ 50 V - 2.5W (Ta), 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDT86106LZ

FDT86106LZ

FDT86106 - N-CHANNEL POWERTRENCH

Fairchild Semiconductor
2,906 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 3.2A (Ta) 4.5V, 10V 108mOhm @ 3.2A, 10V 2.2V @ 250µA 7 nC @ 10 V ±20V 315 pF @ 50 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC3020DC

FDMC3020DC

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,627 -

RFQ

FDMC3020DC

Ficha técnica

Bulk Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 40A (Tc) 4.5V, 10V 6.25mOhm @ 12A, 10V 3V @ 250µA 23 nC @ 10 V ±20V 1385 pF @ 15 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF76439S3ST

HUF76439S3ST

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
3,864 -

RFQ

HUF76439S3ST

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 12mOhm @ 75A, 10V 3V @ 250µA 84 nC @ 10 V ±16V 2745 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF260N60E

FCPF260N60E

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
2,541 -

RFQ

FCPF260N60E

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 260mOhm @ 7.5A, 10V 3.5V @ 250µA 62 nC @ 10 V ±20V 2500 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
Total 1812 Record«Prev1... 868788899091Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário