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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYW55-TAPDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
13,309 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
SB550-E3/54DIODE SCHOTTKY 50V 5A DO201AD Vishay General Semiconductor - Diodes Division |
4,427 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 5A | -65°C ~ 150°C | 650 mV @ 5 A | |
|
VS-T85HFL60S05DIODE GEN PURP 600V 85A D-55 Vishay General Semiconductor - Diodes Division |
3,920 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 500 ns | 20 mA @ 600 V | 600 V | 85A | - | - | |
|
|
VS-T85HFL80S05DIODE GEN PURP 800V 85A D-55 Vishay General Semiconductor - Diodes Division |
2,307 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 500 ns | 20 mA @ 800 V | 800 V | 85A | - | - | |
|
20ETF08SDIODE GEN PURP 800V 20A D2PAK Vishay General Semiconductor - Diodes Division |
3,749 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 400 ns | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
BYG21K-E3/TRDIODE AVALANCHE 800V 1.5A Vishay General Semiconductor - Diodes Division |
4,033 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A | |
|
SE30AFG-M3/6ADIODE GEN PURP 400V 1.4A DO221AC Vishay General Semiconductor - Diodes Division |
16,927 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 1.4A (DC) | -55°C ~ 175°C | 1.1 V @ 3 A |
|
VS-E4PU6006LHN3DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division |
203 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 74 ns | 50 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.7 V @ 60 A |
|
S8CJ-M3/IDIODE GEN PURP 600V 8A DO214AB Vishay General Semiconductor - Diodes Division |
6,725 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 79pF @ 4V, 1MHz | 4 µs | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 985 mV @ 8 A | |
|
GSD2004WS-E3-08DIODE GEN PURP 240V 225MA SOD323 Vishay General Semiconductor - Diodes Division |
26,515 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 240 V | 240 V | 225mA (DC) | 150°C (Max) | 1 V @ 100 mA | |
|
|
20ETF12SDIODE GEN PURP 1.2KV 20A D2PAK Vishay General Semiconductor - Diodes Division |
2,841 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
|
T40HFL10S02DIODE GEN PURP 100V 40A D-55 Vishay General Semiconductor - Diodes Division |
3,864 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | 200 ns | 100 µA @ 100 V | 100 V | 40A | - | - | |
|
|
T70HFL10S02DIODE GEN PURP 100V 70A D-55 Vishay General Semiconductor - Diodes Division |
3,529 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis Mount | - | 200 ns | 100 µA @ 100 V | 100 V | 70A | - | - | ||
|
|
T85HFL10S05DIODE GEN PURP 100V 85A D-55 Vishay General Semiconductor - Diodes Division |
3,438 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 500 ns | 20 mA @ 100 V | 100 V | 85A | - | - | |
|
|
T85HFL40S05DIODE GEN PURP 400V 85A D-55 Vishay General Semiconductor - Diodes Division |
2,054 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | 500 ns | 20 mA @ 400 V | 400 V | 85A | - | - | |
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VS-CPU6006LHN3DIODE GEN PURP 600V 30A TO247AD Vishay General Semiconductor - Diodes Division |
231 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 42 ns | 30 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 1.75 V @ 30 A |
|
VS-EPH6007L-N3RECTIFER HYPERFAST 60A TO-247AD Vishay General Semiconductor - Diodes Division |
165 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 65 ns | 30 µA @ 650 V | 650 V | 60A | -55°C ~ 175°C | 2.2 V @ 60 A | |
|
|
SB530-E3/54DIODE SCHOTTKY 30V 5A DO201AD Vishay General Semiconductor - Diodes Division |
8,867 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 5A | -65°C ~ 150°C | 480 mV @ 5 A | |
|
|
VSSA310S-M3/61TDIODE SCHOTTKY 100V 1.7A DO214AC Vishay General Semiconductor - Diodes Division |
10,634 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 175pF @ 4V, 1MHz | - | 150 µA @ 100 V | 100 V | 1.7A (DC) | -40°C ~ 150°C | 800 mV @ 3 A |
|
SD103N10S10PVDIODE GEN PURP 1KV 110A DO205 Vishay General Semiconductor - Diodes Division |
3,004 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Stud Mount | - | 1 µs | 35 mA @ 1000 V | 1000 V | 110A | -40°C ~ 125°C | 2.23 V @ 345 A |
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