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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5392-E3/54DIODE GEN PURP 100V 1.5A DO204AL Vishay General Semiconductor - Diodes Division |
23,147 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 100 V | 100 V | 1.5A | -50°C ~ 150°C | 1.4 V @ 1.5 A | |
|
US1JHE3_A/HDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,041 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
VS-1N3893DIODE GEN PURP 400V 12A DO203AA Vishay General Semiconductor - Diodes Division |
3,655 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 300 ns | 25 µA @ 400 V | 400 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
1N4003-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
9,576 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
30HFU-100DIODE GEN PURP 100V 30A DO203AB Vishay General Semiconductor - Diodes Division |
2,871 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 80 ns | 35 µA @ 100 V | 100 V | 30A | -40°C ~ 125°C | 1.45 V @ 30 A | |
|
|
30HFU-200DIODE GEN PURP 200V 30A DO203AB Vishay General Semiconductor - Diodes Division |
2,819 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 80 ns | 35 µA @ 200 V | 200 V | 30A | -40°C ~ 125°C | 1.45 V @ 30 A | |
|
|
30HFU-300DIODE GEN PURP 300V 30A DO203AB Vishay General Semiconductor - Diodes Division |
3,851 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 80 ns | 35 µA @ 300 V | 300 V | 30A | -40°C ~ 125°C | 1.45 V @ 30 A | |
|
|
1N5399-E3/54DIODE GEN PURP 1KV 1.5A DO204 Vishay General Semiconductor - Diodes Division |
6,587 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1.5A | -50°C ~ 150°C | 1.4 V @ 1.5 A | |
|
|
1N5395-E3/54DIODE GEN PURP 400V 1.5A DO204AL Vishay General Semiconductor - Diodes Division |
8,964 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1.5A | -50°C ~ 150°C | 1.4 V @ 1.5 A | |
|
ES3B-E3/57TDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
18,400 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
|
30HFU-400DIODE GEN PURP 400V 30A DO203AB Vishay General Semiconductor - Diodes Division |
2,099 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 80 ns | 35 µA @ 400 V | 400 V | 30A | -40°C ~ 125°C | 1.45 V @ 30 A | |
|
|
30HFU-600DIODE GEN PURP 600V 30A DO203AB Vishay General Semiconductor - Diodes Division |
3,037 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 80 ns | 35 µA @ 600 V | 600 V | 30A | -40°C ~ 125°C | 1.45 V @ 30 A | |
|
BYV27-100-TRDIODE AVALANCHE 100V 2A SOD57 Vishay General Semiconductor - Diodes Division |
37,811 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1.07 V @ 3 A | |
|
|
BYV27-100-TAPDIODE AVALANCHE 100V 2A SOD57 Vishay General Semiconductor - Diodes Division |
13,841 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1.07 V @ 3 A | |
|
|
1N4934-E3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
6,767 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 12pF @ 4V, 1MHz | 200 ns | 5 µA @ 100 V | 100 V | 1A | -50°C ~ 150°C | 1.2 V @ 1 A | |
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SS1P3L-M3/84ADIODE SCHOTTKY 30V 1.5A DO220AA Vishay General Semiconductor - Diodes Division |
35,451 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 1.5A | -55°C ~ 150°C | 450 mV @ 1 A |
|
VS-SD1100C04CDIODE GEN PURP 400V 1400A B-43 Vishay General Semiconductor - Diodes Division |
2,706 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 35 mA @ 400 V | 400 V | 1400A | - | 1.31 V @ 1500 A | |
|
|
S3M-E3/9ATDIODE GEN PURP 1KV 3A DO214AB Vishay General Semiconductor - Diodes Division |
5,957 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
|
IRD3900DIODE GEN PURP 100V 20A DO203AB Vishay General Semiconductor - Diodes Division |
2,037 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 350 ns | 50 µA @ 100 V | 100 V | 20A | -40°C ~ 125°C | 1.65 V @ 62.8 A | |
|
|
IRD3901DIODE GEN PURP 200V 20A DO203AB Vishay General Semiconductor - Diodes Division |
2,250 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | 350 ns | 50 µA @ 200 V | 200 V | 20A | -40°C ~ 125°C | 1.65 V @ 62.8 A |
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