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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-21DQ04DIODE SCHOTTKY 40V 2A DO204AL Vishay General Semiconductor - Diodes Division |
2,943 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 40 V | 40 V | 2A | -40°C ~ 150°C | 550 mV @ 2 A | |
|
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1N4936GP-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
7,148 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 200 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
1N5819-E3/51DIODE SCHOTTKY 40V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,146 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 1 mA @ 40 V | 40 V | 1A | -65°C ~ 125°C | 600 mV @ 1 A | |
|
1N5822-E3/51DIODE SCHOTTKY 40V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,805 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 2 mA @ 40 V | 40 V | 3A | -65°C ~ 125°C | 525 mV @ 3 A | |
|
S1G-E3/1DIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,906 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
BA157GP-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
10,865 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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VS-2EQH01HM3/HULTRAFAST RECTIFIER 2A DO-219AD Vishay General Semiconductor - Diodes Division |
6,008 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 200V | 23 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
S2G-E3/1DIODE GEN PURP 400V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,080 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
|
UF4007-E3/53DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
5,427 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | - | 1000 V | 1A | -65°C ~ 150°C | 1.7 V @ 1 A | |
|
VSKY10401406-G4-08DIODE SCHOTTKY 40V 1A CLP1406-2L Vishay General Semiconductor - Diodes Division |
6,326 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 225pF @ 0V, 1MHz | - | 100 µA @ 40 V | 40 V | 1A | 150°C (Max) | 490 mV @ 1 A | |
|
S3G-E3/51TDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,942 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
8ETL06DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,808 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A | |
|
8ETL06-1DIODE GEN PURP 600V 8A TO262 Vishay General Semiconductor - Diodes Division |
3,667 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
8ETL06SDIODE GEN PURP 600V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,559 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 250 ns | 5 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 1.05 V @ 8 A |
|
15ETL06DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
3,057 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 270 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
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15ETL06-1DIODE GEN PURP 600V 15A TO262 Vishay General Semiconductor - Diodes Division |
2,610 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 270 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
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15ETL06SDIODE GEN PURP 600V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,567 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 270 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
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SB160-E3/51DIODE SCHOTTKY 60V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,701 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 60 V | 60 V | 1A | -65°C ~ 150°C | 650 mV @ 1 A | |
|
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SB520-E3/51DIODE SCHOTTKY 20V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,917 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 20 V | 20 V | 5A | -65°C ~ 150°C | 480 mV @ 5 A | |
|
|
BY252P-E3/54DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,647 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A |
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