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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ES1PA-M3/84ADIODE GEN PURP 50V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,499 | - |
RFQ |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A | |
|
ES3A-E3/51TDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,730 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
BYV26D-TRDIODE AVALANCHE 800V 1A SOD57 Vishay General Semiconductor - Diodes Division |
15,255 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A | |
|
LL4151-GS08DIODE GEN PURP 50V 150MA SOD80 Vishay General Semiconductor - Diodes Division |
1,586 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 50 nA @ 50 V | 50 V | 150mA | -65°C ~ 175°C | 1 V @ 50 mA | |
|
RS07G-M-08DIODE GP 400V 500MA DO219AB Vishay General Semiconductor - Diodes Division |
328 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 9pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 500mA | -55°C ~ 150°C | 1.15 V @ 700 mA |
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BYS10-35-E3/TRDIODE SCHOTTKY 35V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,008 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 35 V | 35 V | 1.5A | -65°C ~ 150°C | 500 mV @ 1 A | |
|
VSKY02400603-G4-08DIODE SCHTKY 40V 200MA CLP06032M Vishay General Semiconductor - Diodes Division |
10,654 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 30pF @ 0V, 1MHz | - | 10 µA @ 40 V | 40 V | 200mA (DC) | 150°C (Max) | 540 mV @ 200 mA | |
|
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BYV26D-TAPDIODE AVALANCHE 800V 1A SOD57 Vishay General Semiconductor - Diodes Division |
5,592 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 75 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 175°C | 2.5 V @ 1 A | |
|
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BYW36-TAPDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
8,805 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
RGP15J-E3/73DIODE GEN PURP 600V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
21,851 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
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BAQ335-TRDIODE GP 125V 200MA MICROMELF Vishay General Semiconductor - Diodes Division |
8,587 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Last Time Buy | Surface Mount | 3pF @ 0V, 1MHz | - | 1 nA @ 60 V | 125 V | 200mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
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ESH1PA-M3/84ADIODE GEN PURP 50V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,075 | - |
RFQ |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
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S1PA-M3/84ADIODE GEN PURP 50V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,020 | - |
RFQ |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 1.8 µs | 1 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
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SSC53L-E3/51TDIODE SCHOTTKY 30V 5A DO214AB Vishay General Semiconductor - Diodes Division |
2,238 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 700 µA @ 30 V | 30 V | 5A | -65°C ~ 150°C | 450 mV @ 5 A | |
|
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S1GHE3/61TDIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,196 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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VS-8EWS12STRPBFDIODE GEN PURP 1.2KV 8A DPAK Vishay General Semiconductor - Diodes Division |
3,944 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
BY255GP-E3/73DIODE GEN PURP 1.3KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,599 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 1300 V | 1300 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
VS-80SQ030TRDIODE SCHOTTKY 30V 8A DO204AR Vishay General Semiconductor - Diodes Division |
2,164 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 900pF @ 5V, 1MHz | - | 2 mA @ 30 V | 30 V | 8A | -55°C ~ 175°C | 530 mV @ 8 A | |
|
V8PM12HM3_A/HDIODE SCHOTTKY 120V 3.6A TO277A Vishay General Semiconductor - Diodes Division |
2,442 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 120 V | 120 V | 3.6A | -40°C ~ 150°C | 840 mV @ 8 A |
|
S2GHE3_A/IDIODE GEN PURP 400V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
6,186 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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