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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS1P4LHM3/85ADIODE SCHOTTKY 40V 1.5A DO220AA Vishay General Semiconductor - Diodes Division |
9,900 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 150 µA @ 40 V | 40 V | 1.5A | -55°C ~ 150°C | 480 mV @ 1 A |
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NSF8BTHE3_B/PDIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,281 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
S1DA-E3/5ATDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,710 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8pF @ 4V, 1MHz | 1 µs | 3 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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SE50PAG-M3/IDIODE GEN PURP 400V 5A DO221BC Vishay General Semiconductor - Diodes Division |
9,463 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 32pF @ 4V, 1MHz | 2 µs | 10 µA @ 400 V | 400 V | 5A | -55°C ~ 175°C | 1.16 V @ 5 A |
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NSF8DTHE3_B/PDIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,710 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
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S1DHE3/5ATDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,418 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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NSF8GTHE3_B/PDIODE GEN PURP 400V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,959 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
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S1GA-E3/5ATDIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,543 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8pF @ 4V, 1MHz | 1 µs | 3 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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NSF8JTHE3_B/PDIODE GEN PURP 600V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,839 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
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S1JA-E3/5ATDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,567 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
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SS1P3L-M3/85ADIODE SCHOTTKY 30V 1A DO220AA Vishay General Semiconductor - Diodes Division |
8,735 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 1A | -55°C ~ 150°C | 450 mV @ 1 A |
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NSF8KTHE3_B/PDIODE GEN PURP 800V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,316 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
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S1KA-E3/5ATDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,879 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8pF @ 4V, 1MHz | 1 µs | 3 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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NSF8MTHE3_B/PDIODE GEN PURP 1KV 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,448 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
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S1KHE3/5ATDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,604 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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VS-30EPH06P-S1DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,675 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A | |
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S1MA-E3/5ATDIODE GEN PURP 1KV 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,561 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 8pF @ 4V, 1MHz | 1 µs | 3 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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VS-40APS16PBFDIODE GEN PURP 1.6KV 40A TO247AC Vishay General Semiconductor - Diodes Division |
3,781 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 40A | -40°C ~ 150°C | 1.14 V @ 40 A | ||
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S1MHE3/5ATDIODE GEN PURP 1KV 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,223 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q100 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 1.8 µs | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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VS-60APH03-N-S1DIODE GEN PURP 300V 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,769 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 42 ns | 10 µA @ 300 V | 300 V | 60A | -40°C ~ 150°C | 1.45 V @ 60 A |
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