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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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S1PJHE3/85ADIODE GEN PURP 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,377 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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VS-15TT100SCHOTTKY - TO-220-E3 Vishay General Semiconductor - Diodes Division |
3,388 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 550pF @ 5V, 1MHz | - | 120 µA @ 100 V | 100 V | 15A | -55°C ~ 175°C | 920 mV @ 30 A | ||
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S1PK-E3/85ADIODE GEN PURP 800V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,808 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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VS-MBR10T100DIODE SCHOTTKY 100V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,878 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 400pF @ 5V, 1MHz | - | 100 µA @ 100 V | 100 V | 10A | -55°C ~ 175°C | 790 mV @ 10 A | |
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S1PKHE3/85ADIODE GEN PURP 800V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,966 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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VS-20UT04DIODE SCHOTTKY 45V 20A IPAK Vishay General Semiconductor - Diodes Division |
2,194 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1900pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 610 mV @ 20 A | |
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S1PM-E3/85ADIODE GEN PURP 1KV 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,072 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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1N4001GPE-E3/91DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,777 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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S1PMHE3/85ADIODE GEN PURP 1KV 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,670 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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1N5615GP-E3/73DIODE GEN PURP 200V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,017 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 4V, 1MHz | 150 ns | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
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S3AHE3/9ATDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,078 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
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FESE16HT-E3/45DIODE GEN PURP 500V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,338 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 145pF @ 4V, 1MHz | 50 ns | 10 µA @ 500 V | 500 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A | ||
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S3BHE3/9ATDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,458 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
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FESE16JT-E3/45DIODE GEN PURP 600V 16A TO220AC Vishay General Semiconductor - Diodes Division |
2,274 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 145pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A | ||
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S3DHE3/9ATDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,998 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
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FESE8HT-E3/45DIODE GEN PURP 500V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,165 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A | |
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SL12-E3/5ATDIODE SCHOTTKY 20V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
4,470 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 1.5A | -55°C ~ 125°C | 445 mV @ 1 A | |
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S3JHE3/9ATDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,831 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
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FESE8JT-E3/45DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,663 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 50pF @ 4V, 1MHz | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A | |
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S3KHE3/9ATDIODE GEN PURP 800V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,819 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
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