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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RGP02-16EHE3/73DIODE GEN PURP 1.6KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
2,814 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 1600 V | 1600 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
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BYD13JGP-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,146 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
VS-HFA08PB120PBFDIODE GEN PURP 1.2KV 8A TO247AC Vishay General Semiconductor - Diodes Division |
2,287 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 95 ns | 10 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 3.3 V @ 8 A |
|
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RGP02-17EHE3/73DIODE GEN PURP 1.7KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
3,676 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 1700 V | 1700 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
|
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BYD13JGPHE3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,977 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 5 µA @ 200 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
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VS-HFA25PB60PBFDIODE GEN PURP 600V 25A TO247AC Vishay General Semiconductor - Diodes Division |
2,858 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 20 µA @ 600 V | 600 V | 25A | -55°C ~ 150°C | 1.7 V @ 25 A |
|
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RGP02-18EHE3/73DIODE GEN PURP 1.8KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
2,962 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 1800 V | 1800 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
|
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BYD13KGP-E3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,193 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 800 V | 1A | -65°C ~ 175°C | - | |
|
UB8CT-E3/8WDIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,077 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 20 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 1.02 V @ 8 A | ||
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VS-HFA16PB120PBFDIODE GEN PURP 1.2KV 16A TO247AC Vishay General Semiconductor - Diodes Division |
3,807 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 135 ns | 20 µA @ 1200 V | 1200 V | 16A | -55°C ~ 150°C | 3 V @ 16 A |
|
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RGP10A-E3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,601 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
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BYD13KGPHE3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,592 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 800 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A | |
|
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UB8DT-E3/8WDIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,158 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 20 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1.02 V @ 8 A | ||
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VS-20TQ040-N3DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division |
2,261 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 40 V | 40 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
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VS-20TQ040SPBFDIODE SCHOTTKY 20A D2PAK Vishay General Semiconductor - Diodes Division |
3,730 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 40 V | 40 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
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VS-20TQ045-N3DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division |
2,528 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
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VS-HFA30PB120PBFDIODE GEN PURP 1.2KV 30A TO247AC Vishay General Semiconductor - Diodes Division |
3,012 | - |
RFQ |
Ficha técnica |
Bulk | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 170 ns | 40 µA @ 1200 V | 1200 V | 30A | -55°C ~ 150°C | 4.1 V @ 30 A |
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VS-20TT100DIODE SCHOTTKY 20A TO-220 Vishay General Semiconductor - Diodes Division |
2,454 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 850pF @ 5V, 1MHz | - | 150 µA @ 100 V | 100 V | 20A | -55°C ~ 175°C | 800 mV @ 20 A | |
|
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RGP10AHE3/73DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,756 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
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BYD13MGP-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,068 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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