Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-40EPS16PBF

VS-40EPS16PBF

DIODE GEN PURP 1.6KV 40A TO247AC

Vishay General Semiconductor - Diodes Division
2,236 -

RFQ

VS-40EPS16PBF

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - - 100 µA @ 1600 V 1600 V 40A -40°C ~ 150°C 1.14 V @ 40 A
VS-60APF02PBF

VS-60APF02PBF

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division
3,270 -

RFQ

VS-60APF02PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 180 ns 100 µA @ 200 V 200 V 60A -40°C ~ 150°C 1.3 V @ 60 A
BYD33DGP-E3/54

BYD33DGP-E3/54

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,566 -

RFQ

BYD33DGP-E3/54

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 1 A
UG06C-E3/54

UG06C-E3/54

DIODE GEN PURP 150V 600MA MPG06

Vishay General Semiconductor - Diodes Division
2,425 -

RFQ

UG06C-E3/54

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 9pF @ 4V, 1MHz 25 ns 5 µA @ 150 V 150 V 600mA -55°C ~ 150°C 950 mV @ 600 mA
VS-MUR820PBF

VS-MUR820PBF

DIODE GEN PURP 200V 8A TO220AC

Vishay General Semiconductor - Diodes Division
2,427 -

RFQ

VS-MUR820PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Discontinued at Digi-Key Through Hole - 35 ns 5 µA @ 200 V 200 V 8A -65°C ~ 175°C 975 mV @ 8 A
VS-10BQ030PBF

VS-10BQ030PBF

DIODE SCHOTTKY 30V 1A SMB

Vishay General Semiconductor - Diodes Division
3,023 -

RFQ

VS-10BQ030PBF

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 500 µA @ 30 V 30 V 1A -55°C ~ 150°C 420 mV @ 1 A
RGP10BEHE3/73

RGP10BEHE3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,531 -

RFQ

RGP10BEHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.3 V @ 1 A
BYD33DGPHE3/54

BYD33DGPHE3/54

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,585 -

RFQ

BYD33DGPHE3/54

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.3 V @ 1 A
UG2G-E3/54

UG2G-E3/54

DIODE GEN PURP 400V 2A DO204AC

Vishay General Semiconductor - Diodes Division
2,335 -

RFQ

UG2G-E3/54

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 25 ns 5 µA @ 400 V 400 V 2A -55°C ~ 150°C 950 mV @ 2 A
VS-8ETH06PBF

VS-8ETH06PBF

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division
2,917 -

RFQ

VS-8ETH06PBF

Ficha técnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 25 ns 50 µA @ 600 V 600 V 8A -65°C ~ 175°C 2.4 V @ 8 A
VS-10BQ040PBF

VS-10BQ040PBF

DIODE SCHOTTKY 40V 1A SMB

Vishay General Semiconductor - Diodes Division
3,158 -

RFQ

VS-10BQ040PBF

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 100 µA @ 40 V 40 V 1A -55°C ~ 150°C 530 mV @ 1 A
RGP10BHE3/73

RGP10BHE3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,043 -

RFQ

RGP10BHE3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 100 V 100 V 1A -65°C ~ 175°C 1.3 V @ 1 A
VS-60APF04PBF

VS-60APF04PBF

DIODE GEN PURP 400V 60A TO247AC

Vishay General Semiconductor - Diodes Division
3,996 -

RFQ

VS-60APF04PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 180 ns 100 µA @ 400 V 400 V 60A -40°C ~ 150°C 1.3 V @ 60 A
VS-60APF06PBF

VS-60APF06PBF

DIODE GEN PURP 600V 60A TO247AC

Vishay General Semiconductor - Diodes Division
2,499 -

RFQ

VS-60APF06PBF

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 180 ns 100 µA @ 600 V 600 V 60A -40°C ~ 150°C 1.3 V @ 60 A
VS-60APF10PBF

VS-60APF10PBF

DIODE GEN PURP 1KV 60A TO247AC

Vishay General Semiconductor - Diodes Division
3,515 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 480 ns 100 µA @ 1000 V 1000 V 60A -40°C ~ 150°C 1.4 V @ 60 A
VS-60APF12PBF

VS-60APF12PBF

DIODE GEN PURP 1.2KV 60A TO247AC

Vishay General Semiconductor - Diodes Division
2,287 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 480 ns 100 µA @ 1200 V 1200 V 60A -40°C ~ 150°C 1.4 V @ 60 A
CS1J-E3/I

CS1J-E3/I

DIODE GPP 600V 1.0A DO-214AC

Vishay General Semiconductor - Diodes Division
2,297 -

RFQ

CS1J-E3/I

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount 6pF @ 4V, 1MHz 1.5 µs 5 µA @ 600 V 600 V 1A -55°C ~ 150°C 1.1 V @ 1 A
CS1M-E3/I

CS1M-E3/I

DIODE GPP 1000V 1.0A DO-214AC

Vishay General Semiconductor - Diodes Division
2,147 -

RFQ

CS1M-E3/I

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount 6pF @ 4V, 1MHz 1.5 µs 5 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1.1 V @ 1 A
CS3M-E3/I

CS3M-E3/I

DIODE GPP 1000V 3.0A DO-214AB

Vishay General Semiconductor - Diodes Division
2,111 -

RFQ

CS3M-E3/I

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Surface Mount 26pF @ 4V, 1MHz 2.8 µs 5 µA @ 1000 V 1000 V 2A -55°C ~ 150°C 1.15 V @ 3 A
VS-8EVH06-M3/I

VS-8EVH06-M3/I

DIODE GEN PURPOSE 600V SLIMDPAK

Vishay General Semiconductor - Diodes Division
393 -

RFQ

VS-8EVH06-M3/I

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 25 ns 20 µA @ 600 V 600 V 8A -55°C ~ 175°C 2.4 V @ 8 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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