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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
FESF8DTHE3_A/P DIODE GEN PURP 200V 8A ITO220AC Vishay General Semiconductor - Diodes Division	3,229	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 200 V	200 V	8A	-55°C ~ 150°C	950 mV @ 8 A
VS-60EPF06-M3 DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division	2,376	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	180 ns	100 µA @ 600 V	600 V	60A	-40°C ~ 150°C	1.3 V @ 60 A
VS-12TQ045STRR-M3 DIODE SCHOTTKY 45V 15A D2PAK Vishay General Semiconductor - Diodes Division	2,242	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	900pF @ 5V, 1MHz	-	1.75 mA @ 45 V	45 V	15A	-55°C ~ 150°C	560 mV @ 15 A
VS-6FR120 DIODE GEN PURP 1.2KV 6A DO203AA Vishay General Semiconductor - Diodes Division	2,084	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	12 mA @ 1200 V	1200 V	6A	-65°C ~ 175°C	1.1 V @ 19 A
FESF8FTHE3_A/P DIODE GEN PURP 300V 8A ITO220AC Vishay General Semiconductor - Diodes Division	2,220	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 300 V	300 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
VS-40HFLR20S02 DIODE GEN PURP 200V 40A DO203AB Vishay General Semiconductor - Diodes Division	2,018	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	100 µA @ 200 V	200 V	40A	-40°C ~ 125°C	1.95 V @ 40 A
VS-60EPF10-M3 DIODE GEN PURP 1KV 60A TO247AC Vishay General Semiconductor - Diodes Division	3,428	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	480 ns	100 µA @ 1000 V	1000 V	60A	-40°C ~ 150°C	1.4 V @ 60 A
VS-30WQ10FNTRLHM3 DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division	3,087	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	92pF @ 5V, 1MHz	-	1 mA @ 100 V	100 V	3.5A	-40°C ~ 150°C	810 mV @ 3 A
FESF8GTHE3_A/P DIODE GEN PURP 400V 8A ITO220AC Vishay General Semiconductor - Diodes Division	3,021	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 400 V	400 V	8A	-55°C ~ 150°C	1.3 V @ 8 A
VS-80APS16-M3 DIODE GEN PURP 1.6KV 80A TO247AC Vishay General Semiconductor - Diodes Division	3,620	-	RFQ	Ficha técnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1600 V	1600 V	80A	-40°C ~ 150°C	1.17 V @ 80 A
VS-60EPF12-M3 DIODE GEN PURP 1.2KV 60A TO247AC Vishay General Semiconductor - Diodes Division	3,035	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	480 ns	100 µA @ 1200 V	1200 V	60A	-40°C ~ 150°C	1.4 V @ 60 A
VS-30WQ10FNTRRHM3 DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division	2,317	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	92pF @ 5V, 1MHz	-	1 mA @ 100 V	100 V	3.5A	-40°C ~ 150°C	810 mV @ 3 A
FESF8HTHE3_A/P DIODE GEN PURP 500V 8A ITO220AC Vishay General Semiconductor - Diodes Division	3,825	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 500 V	500 V	8A	-55°C ~ 150°C	1.5 V @ 8 A
BY254P-E3/54 DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division	145	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	40pF @ 4V, 1MHz	3 µs	5 µA @ 800 V	800 V	3A	-55°C ~ 150°C	1.1 V @ 3 A
V10PM15-M3/H DIODE SCHOTTKY TMBS 10A 150V SMP Vishay General Semiconductor - Diodes Division	3,727	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	eSMP®, TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	680pF @ 4V, 1MHz	-	200 µA @ 150 V	150 V	10A	-40°C ~ 175°C	1.08 V @ 10 A
S3GHE3_A/H DIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division	843	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	2.5 µs	10 µA @ 400 V	400 V	3A	-55°C ~ 150°C	1.15 V @ 2.5 A
SSC54-M3/57T DIODE SCHOTTKY 5A 40V DO-214AB Vishay General Semiconductor - Diodes Division	2,778	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	500 µA @ 40 V	40 V	5A	-65°C ~ 150°C	490 mV @ 5 A
S3BHE3_A/H DIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division	788	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Automotive, AEC-Q101	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 4V, 1MHz	2.5 µs	10 µA @ 100 V	100 V	3A	-55°C ~ 150°C	1.15 V @ 2.5 A
S2M-E3/52T DIODE GEN PURP 1KV 1.5A DO214 Vishay General Semiconductor - Diodes Division	1,475	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	16pF @ 4V, 1MHz	2 µs	1 µA @ 1000 V	1000 V	1.5A	-55°C ~ 150°C	1.15 V @ 1.5 A
MUR420-E3/54 DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division	3,359	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	5 µA @ 200 V	200 V	4A	-65°C ~ 175°C	890 mV @ 4 A