Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
AS4PJ-M3/86A

AS4PJ-M3/86A

DIODE AVALANCHE 600V 2.4A TO277A

Vishay General Semiconductor - Diodes Division
3,777 -

RFQ

AS4PJ-M3/86A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 60pF @ 4V, 1MHz 1.8 µs 10 µA @ 600 V 600 V 2.4A (DC) -55°C ~ 175°C 962 mV @ 2 A
GI1-1600GP-E3/54

GI1-1600GP-E3/54

DIODE GEN PURP 1.6KV 1A DO204AC

Vishay General Semiconductor - Diodes Division
2,727 -

RFQ

GI1-1600GP-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 10 µA @ 1600 V 1600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
DGP15-E3/54

DGP15-E3/54

DIODE GEN PURP 1.5KV 1.5A DO204

Vishay General Semiconductor - Diodes Division
3,198 -

RFQ

DGP15-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SUPERECTIFIER® RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 20 µs 5 µA @ 1500 V 1500 V 1.5A -65°C ~ 175°C 1.1 V @ 1 A
S3M-E3/57T

S3M-E3/57T

DIODE GEN PURP 1KV 3A DO214AB

Vishay General Semiconductor - Diodes Division
431 -

RFQ

S3M-E3/57T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 2.5 µs 10 µA @ 1000 V 1000 V 3A -55°C ~ 150°C 1.15 V @ 2.5 A
VS-30WQ10FNTRHM3

VS-30WQ10FNTRHM3

DIODE SCHOTTKY DPAK

Vishay General Semiconductor - Diodes Division
3,435 -

RFQ

VS-30WQ10FNTRHM3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 92pF @ 5V, 1MHz - 1 mA @ 100 V 100 V 3.5A -40°C ~ 150°C 810 mV @ 3 A
VS-40HFL40S05

VS-40HFL40S05

DIODE GEN PURP 400V 40A DO203AB

Vishay General Semiconductor - Diodes Division
2,381 -

RFQ

VS-40HFL40S05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 100 µA @ 400 V 400 V 40A -40°C ~ 125°C 1.95 V @ 40 A
FESF8JTHE3_A/P

FESF8JTHE3_A/P

DIODE GEN PURP 600V 8A ITO220AC

Vishay General Semiconductor - Diodes Division
3,493 -

RFQ

FESF8JTHE3_A/P

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 600 V 600 V 8A -55°C ~ 150°C 1.5 V @ 8 A
VS-ETU0805-M3

VS-ETU0805-M3

DIODE GEN PURP 500V 8A TO220AC

Vishay General Semiconductor - Diodes Division
2,257 -

RFQ

VS-ETU0805-M3

Ficha técnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 9 µA @ 500 V 500 V 8A -65°C ~ 175°C 1.25 V @ 8 A
VS-12FL100S05

VS-12FL100S05

DIODE GEN PURP 1KV 12A DO203AA

Vishay General Semiconductor - Diodes Division
2,678 -

RFQ

VS-12FL100S05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 50 µA @ 1000 V 1000 V 12A -65°C ~ 150°C 1.4 V @ 12 A
USB260HM3/52T

USB260HM3/52T

DIODE GEN PURP 600V 2A DO214AA

Vishay General Semiconductor - Diodes Division
3,456 -

RFQ

USB260HM3/52T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 30 ns 5 µA @ 600 V 600 V 2A -55°C ~ 150°C 1.6 V @ 2 A
S3J-E3/57T

S3J-E3/57T

DIODE GEN PURP 600V 3A DO214AB

Vishay General Semiconductor - Diodes Division
493 -

RFQ

S3J-E3/57T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 60pF @ 4V, 1MHz 2.5 µs 10 µA @ 600 V 600 V 3A -55°C ~ 150°C 1.15 V @ 2.5 A
MF10H100HE3_B/P

MF10H100HE3_B/P

DIODE SCHOTTKY 100V 10A TO220AC

Vishay General Semiconductor - Diodes Division
2,916 -

RFQ

MF10H100HE3_B/P

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 4.5 µA @ 100 V 100 V 10A -65°C ~ 175°C 880 mV @ 20 A
VS-12FLR100S05

VS-12FLR100S05

DIODE GEN PURP 1KV 12A DO203AA

Vishay General Semiconductor - Diodes Division
2,187 -

RFQ

VS-12FLR100S05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 50 µA @ 1000 V 1000 V 12A -65°C ~ 150°C 1.4 V @ 12 A
VS-90EPF12L-M3

VS-90EPF12L-M3

RECTIFIER DIODE 90A 1200V TO-247

Vishay General Semiconductor - Diodes Division
3,298 -

RFQ

VS-90EPF12L-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 480 ns 100 µA @ 1200 V 1200 V 90A -40°C ~ 150°C 1.38 V @ 90 A
U3D-E3/57T

U3D-E3/57T

DIODE GEN PURP 200V 2A DO214AB

Vishay General Semiconductor - Diodes Division
2,789 -

RFQ

U3D-E3/57T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 20 ns 10 µA @ 200 V 200 V 2A -55°C ~ 150°C 900 mV @ 3 A
VS-8ETH06STRLHM3

VS-8ETH06STRLHM3

DIODE GEN PURP 600V 8A TO263

Vishay General Semiconductor - Diodes Division
2,985 -

RFQ

VS-8ETH06STRLHM3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 22 ns 50 µA @ 600 V 600 V 8A -55°C ~ 175°C 2.4 V @ 8 A
AU2PJ-M3/86A

AU2PJ-M3/86A

DIODE AVALANCHE 600V 1.6A TO277A

Vishay General Semiconductor - Diodes Division
3,256 -

RFQ

AU2PJ-M3/86A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Surface Mount 42pF @ 4V, 1MHz 75 ns 10 µA @ 600 V 600 V 1.6A (DC) -55°C ~ 175°C 1.9 V @ 2 A
VS-52PF120

VS-52PF120

DIODE GEN PURP 1.2KV 50A DO203AB

Vishay General Semiconductor - Diodes Division
3,024 -

RFQ

VS-52PF120

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 1200 V 50A -55°C ~ 180°C 1.4 V @ 125 A
VS-80PF120

VS-80PF120

DIODE GEN PURP 1.2KV 80A DO203AB

Vishay General Semiconductor - Diodes Division
2,599 -

RFQ

VS-80PF120

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 1200 V 80A -55°C ~ 180°C 1.4 V @ 220 A
MUR460-E3/73

MUR460-E3/73

DIODE GEN PURP 600V 4A DO201AD

Vishay General Semiconductor - Diodes Division
3,029 -

RFQ

MUR460-E3/73

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 600 V 600 V 4A -65°C ~ 175°C 1.28 V @ 4 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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