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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EGP50D-E3/54DIODE GEN PURP 200V 5A GP20 Vishay General Semiconductor - Diodes Division |
3,777 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 95pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 5A | -65°C ~ 150°C | 950 mV @ 5 A |
|
SE70PGHM3/86ADIODE GEN PURP 400V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
3,182 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 400 V | 400 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A |
|
ES2DHE3/52TDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,428 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A |
|
|
SE70PJHM3/86ADIODE GEN PURP 600V 2.9A TO277A Vishay General Semiconductor - Diodes Division |
2,906 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 76pF @ 4V, 1MHz | 2.6 µs | 20 µA @ 600 V | 600 V | 2.9A (DC) | -55°C ~ 175°C | 1.05 V @ 7 A |
|
GI821-E3/54DIODE GEN PURP 100V 5A P600 Vishay General Semiconductor - Diodes Division |
3,780 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 300pF @ 4V, 1MHz | 200 ns | 10 µA @ 100 V | 100 V | 5A | -50°C ~ 150°C | 1.1 V @ 5 A | |
|
|
GI751-E3/54DIODE GEN PURP 100V 6A P600 Vishay General Semiconductor - Diodes Division |
3,567 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 100 V | 100 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
VS-50WQ04FN-M3DIODE SCHOTTKY 40V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
2,641 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 405pF @ 5V, 1MHz | - | - | 40 V | 5.5A | -40°C ~ 150°C | 510 mV @ 5 A | |
|
1N5817-E3/73DIODE SCHOTTKY 20V 1A DO204AL Vishay General Semiconductor - Diodes Division |
344 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 20 V | 20 V | 1A | -65°C ~ 125°C | 450 mV @ 1 A | |
|
|
GI752-E3/54DIODE GEN PURP 200V 6A P600 Vishay General Semiconductor - Diodes Division |
2,690 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 200 V | 200 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
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|
SS2P4-M3/84ADIODE SCHOTTKY 40V 2A DO220AA Vishay General Semiconductor - Diodes Division |
237 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 150 µA @ 40 V | 40 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A |
|
SS34-M3/57TDIODE SCHOTTKY 3A 40V DO-214AB Vishay General Semiconductor - Diodes Division |
3,416 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
ES1PDHM3/85ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
330 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
|
GI754-E3/54DIODE GEN PURP 400V 6A P600 Vishay General Semiconductor - Diodes Division |
3,010 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 400 V | 400 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
|
VS-50WQ10FN-M3DIODE SCHOTTKY 100V 5.5A DPAK Vishay General Semiconductor - Diodes Division |
2,802 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 183pF @ 5V, 1MHz | - | 1 mA @ 100 V | 100 V | 5.5A | -40°C ~ 150°C | 770 mV @ 5 A | |
|
BYG21M-E3/TR3DIODE AVALANCHE 1KV 1.5A Vishay General Semiconductor - Diodes Division |
411 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A | |
|
GI756-E3/54DIODE GEN PURP 600V 6A P600 Vishay General Semiconductor - Diodes Division |
2,484 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 600 V | 600 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
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|
VSS8D3M10-M3/H3A, 100V, SLIMSMAW TRENCH SKY Vishay General Semiconductor - Diodes Division |
306 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 340pF @ 4V, 1MHz | - | 200 µA @ 100 V | 100 V | 2.1A | -40°C ~ 175°C | 550 mV @ 1.5 A |
|
|
GI758-E3/54DIODE GEN PURP 800V 6A P600 Vishay General Semiconductor - Diodes Division |
3,991 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 800 V | 800 V | 6A | -50°C ~ 150°C | 950 mV @ 6 A | |
|
|
VS-15MQ040-M3/5ATDIODE SCHOTTKY 1.5A 40V SMA Vishay General Semiconductor - Diodes Division |
2,854 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 134pF @ 10V, 1MHz | - | 500 µA @ 40 V | 40 V | 1.5A | -40°C ~ 150°C | 430 mV @ 1.5 A | |
|
|
P600G-E3/54DIODE GEN PURP 400V 6A P600 Vishay General Semiconductor - Diodes Division |
3,881 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 400 V | 400 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A |
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