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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYV26DGP-E3/73DIODE GEN PURP 800V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,690 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A |
|
P600K-E3/54DIODE GEN PURP 800V 6A P600 Vishay General Semiconductor - Diodes Division |
2,343 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 800 V | 800 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
VS-2EFH02HM3/IDIODE GEN PURP 200V 2A DO219AB Vishay General Semiconductor - Diodes Division |
10,127 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 950 mV @ 2 A |
|
P600A-E3/54DIODE GEN PURP 50V 6A P600 Vishay General Semiconductor - Diodes Division |
2,012 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 50 V | 50 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
UH1D-M3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,308 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 17pF @ 4V, 1MHz | 30 ns | 1 µA @ 150 V | 200 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A | |
|
MURS340HE3/57TDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,873 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A | |
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UH1PD-M3/84ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,384 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 40 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A | |
|
RGP02-20EHE3/54DIODE GEN PURP 2KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
2,023 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 2000 V | 2000 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
|
UH2D-M3/52TDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,975 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 42pF @ 4V, 1MHz | 35 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.05 V @ 2 A | ||
|
|
RGP02-20EHE3/73DIODE GEN PURP 2KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
3,208 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 2000 V | 2000 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
|
|
UH3B-M3/57TDIODE GEN PURP 100V 2.5A DO214AB Vishay General Semiconductor - Diodes Division |
3,131 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 42pF @ 4V, 1MHz | 40 ns | 5 µA @ 100 V | 100 V | 2.5A | -55°C ~ 175°C | 1.05 V @ 3 A | |
|
|
S1GHE3/5ATDIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,472 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
|
UH3C-M3/57TDIODE GEN PURP 150V 2.5A DO214AB Vishay General Semiconductor - Diodes Division |
2,538 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 42pF @ 4V, 1MHz | 40 ns | 5 µA @ 150 V | 150 V | 2.5A | -55°C ~ 175°C | 1.05 V @ 3 A | |
|
|
S1JHE3/5ATDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,232 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
VS-MUR820-M3DIODE FRED 200V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,084 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 175°C | 975 mV @ 8 A |
|
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RS2G-E3/5BTDIODE GEN PURP 400V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
119 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
BYM10-1000-E3/96DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,675 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
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SSA24-E3/61TDIODE SCHOTTKY 40V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,056 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 2A | -65°C ~ 150°C | 490 mV @ 2 A | |
|
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BYM10-100-E3/96DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,089 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
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VSSA310S-E3/5ATDIODE SCHOTTKY 100V 1.7A DO214AC Vishay General Semiconductor - Diodes Division |
2,238 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 175pF @ 4V, 1MHz | - | 150 µA @ 100 V | 100 V | 1.7A (DC) | -40°C ~ 150°C | 800 mV @ 3 A |
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