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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1N4002GPE-M3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
2,490 | - |
RFQ |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
1N4003GPE-M3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
3,323 | - |
RFQ |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
VS-SD1100C12CDIODE GEN PURP 1.2KV 1400A B-43 Vishay General Semiconductor - Diodes Division |
2,190 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | 35 mA @ 1200 V | 1200 V | 1400A | - | 1.31 V @ 1500 A | |
|
|
1N4005GPE-M3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
3,192 | - |
RFQ |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
RS2D-E3/52TDIODE GEN PURP 200V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,573 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
1N5407-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,177 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
RS2G-E3/52TDIODE GEN PURP 400V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,311 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
P300D-E3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,049 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 200 V | 200 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
RS2J-E3/52TDIODE GEN PURP 600V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,907 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
P300J-E3/54DIODE GEN PURP 600V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,311 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 2 µs | 5 µA @ 600 V | 600 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
VSSA210-M3/61TDIODE SCHOTTKY 100V 1.7A DO214AC Vishay General Semiconductor - Diodes Division |
2,409 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 175pF @ 4V, 1MHz | - | - | 100 V | 1.7A | -40°C ~ 150°C | 700 mV @ 2 A |
|
|
RS2K-E3/52TDIODE GEN PURP 800V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,337 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 17pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
P300M-E3/54DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,347 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
1N4448TRDIODE GEN PURP 100V 150MA DO35 Vishay General Semiconductor - Diodes Division |
2,567 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 4pF @ 0V, 1MHz | 8 ns | 5 µA @ 75 V | 100 V | 150mA | 175°C (Max) | 1 V @ 100 mA | |
|
|
RS2B-E3/52TDIODE GEN PURP 100V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,672 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
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V3PAL45HM3_A/IDIODE SCHOTTKY 45V 3A SMPA Vishay General Semiconductor - Diodes Division |
3,659 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 450pF @ 4V, 1MHz | - | 450 µA @ 45 V | 45 V | 3A | -40°C ~ 150°C | 540 mV @ 3 A |
|
BAW76-TRDIODE GEN PURP 50V 300MA DO35 Vishay General Semiconductor - Diodes Division |
2,410 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 300mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
|
1N4006GPE-M3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
2,284 | - |
RFQ |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
VSSB420S-M3/52TDIODE SCHOTTKY 200V 1.8A DO214AA Vishay General Semiconductor - Diodes Division |
2,853 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 150 µA @ 200 V | 200 V | 1.8A (DC) | -40°C ~ 150°C | 1.9 V @ 4 A |
|
|
BAW76-TAPDIODE GEN PURP 50V 300MA DO35 Vishay General Semiconductor - Diodes Division |
2,526 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 2pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 300mA (DC) | 175°C (Max) | 1 V @ 100 mA |
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