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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BYG22A-E3/TRDIODE AVALANCHE 50V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,960 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
|
LL4448-GS18DIODE GEN PURP 75V 300MA SOD80 Vishay General Semiconductor - Diodes Division |
2,312 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 8 ns | 25 nA @ 20 V | 75 V | 300mA | 175°C (Max) | 1 V @ 50 mA |
|
UG2D-E3/54DIODE GEN PURP 200V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,203 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
1N4245GP-M3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
3,068 | - |
RFQ |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
RGF1J-E3/67ADIODE GEN PURP 600V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,254 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
UG2B-E3/54DIODE GEN PURP 100V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,120 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 950 mV @ 2 A | |
|
|
SS1H10HE3_B/HDIODE SCHOTTKY 100V 1A SMA Vishay General Semiconductor - Diodes Division |
2,837 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q100 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 µA @ 100 V | 100 V | 1A | 175°C (Max) | 860 mV @ 2 A |
|
S4PJHM3_A/HDIODE GEN PURP 600V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,790 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
|
BYM11-600-E3/96DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,615 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
MMBD914-E3-18DIODE GEN PURP 100V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,598 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 4 ns | 5 µA @ 75 V | 100 V | 200mA | 150°C (Max) | 1 V @ 10 mA | |
|
|
RGF1A-E3/67ADIODE GEN PURP 50V 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,146 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
1N4248GP-M3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
2,324 | - |
RFQ |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
1N4935GP-M3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
2,756 | - |
RFQ |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
1N4942GP-M3/73DIODE GEN PURPOSE DO-204AL Vishay General Semiconductor - Diodes Division |
3,222 | - |
RFQ |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
1N5624GP-E3/73DIODE GEN PURPOSE DO204AC Vishay General Semiconductor - Diodes Division |
3,990 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
|
RGF1J-E3/5CADIODE GEN PURP 600V 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,938 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
BYM11-800-E3/96DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,369 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
LL4148-M-18DIODE GEN PURP 100V 300MA SOD80 Vishay General Semiconductor - Diodes Division |
3,251 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 8 ns | 25 nA @ 20 V | 100 V | 300mA | 175°C (Max) | 1 V @ 50 mA |
|
|
S4PGHM3_A/HDIODE GEN PURP 400V 4A TO277A Vishay General Semiconductor - Diodes Division |
2,442 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
|
|
S4PJ-M3/86ADIODE GEN PURP 600V 4A TO277A Vishay General Semiconductor - Diodes Division |
3,690 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 4A | -55°C ~ 150°C | 1.1 V @ 4 A |
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