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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-15TQ060S-M3DIODE SCHOTTKY 60V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,086 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 720pF @ 5V, 1MHz | - | 800 µA @ 60 V | 60 V | 15A | -55°C ~ 150°C | 620 mV @ 15 A | |
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1N4002-E3/73DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,744 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
|
RS1JHE3_A/HDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,317 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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V3P6LHM3/HSCHOTTKY RECTIFIER 3A 60V SMP Vishay General Semiconductor - Diodes Division |
2,811 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 450pF @ 4V, 1MHz | - | 900 µA @ 60 V | 60 V | 2.3A | -40°C ~ 150°C | 450 mV @ 1.5 A |
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VS-ETH1506-M3DIODE GEN PURP 600V 15A TO220-2 Vishay General Semiconductor - Diodes Division |
3,562 | - |
RFQ |
Ficha técnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 29 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.45 V @ 15 A |
|
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V3PM15HM3/HSCHOTTKY RECTIFIER 3A 150V SMP Vishay General Semiconductor - Diodes Division |
2,431 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 4V, 1MHz | - | 200 µA @ 150 V | 150 V | 1.8A | -40°C ~ 175°C | 760 mV @ 1.5 A |
|
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VS-ETX1506-M3DIODE GEN PURP 600V 15A TO220-2 Vishay General Semiconductor - Diodes Division |
3,882 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 20 ns | 36 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.4 V @ 15 A |
|
|
VS-MBR1645-M3DIODE SCHOTTKY 16A 45V TO-220AC Vishay General Semiconductor - Diodes Division |
1,000 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 200 µA @ 45 V | 45 V | 16A | -65°C ~ 150°C | 630 mV @ 16 A | |
|
|
VS-HFA04TB60S-M3DIODE GEN PURP 600V 4A D2PAK Vishay General Semiconductor - Diodes Division |
3,851 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 42 ns | 3 µA @ 600 V | 600 V | 4A (DC) | -55°C ~ 150°C | 2.2 V @ 8 A |
|
|
VS-25ETS10STRLPBFDIODE GEN PURP 1KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,607 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 1000 V | 1000 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
VS-25ETS10STRRPBFDIODE GEN PURP 1KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
2,618 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 1000 V | 1000 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
VS-25ETS12STRLPBFDIODE GEN PURP 1.2KV 25A TO263AB Vishay General Semiconductor - Diodes Division |
2,753 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
|
VS-25ETS12STRRPBFDIODE GEN PURP 1.2KV 24A D2PAK Vishay General Semiconductor - Diodes Division |
2,869 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 1200 V | 1200 V | 24A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
VS-2EGH02HM3/5BTDIODE GEN PURP 200V 2A SMB Vishay General Semiconductor - Diodes Division |
3,541 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 21 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 900 mV @ 2 A |
|
VS-30BQ100GTRPBFDIODE SCHOTTKY 3.0A SMC Vishay General Semiconductor - Diodes Division |
2,571 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 790 mV @ 3 A | |
|
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VS-30ETH06STRLPBFDIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division |
2,067 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 28 ns | 50 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 2.6 V @ 30 A |
|
|
VS-30ETH06STRRPBFDIODE GEN PURP 600V 30A TO263AB Vishay General Semiconductor - Diodes Division |
2,676 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 31 ns | 50 mA @ 600 V | 600 V | 30A | -65°C ~ 175°C | 2.6 V @ 30 A |
|
VS-30WQ06FNTRRPBFDIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
2,991 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 145pF @ 5V, 1MHz | - | 2 mA @ 60 V | 60 V | 3.5A | -40°C ~ 150°C | 610 mV @ 3 A | |
|
VS-31DQ09GTRDIODE SCHOTTKY 90V 3.3A C16 Vishay General Semiconductor - Diodes Division |
2,777 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 110pF @ 5V, 1MHz | - | 100 µA @ 90 V | 90 V | 3.3A | -40°C ~ 150°C | 850 mV @ 3 A | |
|
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B330LA-M3/61TDIODE SCHOTTKY 30V 3A DO214AC Vishay General Semiconductor - Diodes Division |
3,979 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -65°C ~ 150°C | 500 mV @ 3 A |
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