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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UGB8DT-E3/45DIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,840 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
|
RGP30K-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,760 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 500 ns | 5 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.3 V @ 3 A |
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VS-30WQ06FN-M3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,409 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 5V, 1MHz | - | 2 µA @ 60 V | 60 V | 3.5A | -40°C ~ 150°C | 610 mV @ 3 A | |
|
UF4006-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,138 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
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VS-20WT04FNTRDIODE SCHOTTKY 20A DPAK Vishay General Semiconductor - Diodes Division |
3,705 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 1900pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 20A | -55°C ~ 175°C | 610 mV @ 20 A | |
|
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VS-20WT04FNTRLDIODE SCHOTTKY 20A DPAK Vishay General Semiconductor - Diodes Division |
3,940 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 1900pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 540 mV @ 10 A | |
|
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VS-20WT04FNTRRDIODE SCHOTTKY 20A DPAK Vishay General Semiconductor - Diodes Division |
2,207 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 1900pF @ 5V, 1MHz | - | 100 µA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 540 mV @ 10 A | |
|
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VS-25ETS08STRLPBFDIODE GEN PURP 800V 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,023 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
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VS-25ETS08STRRPBFDIODE GEN PURP 800V 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,984 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 25A | -40°C ~ 150°C | 1.14 V @ 25 A | |
|
1N4148W-HE3-08DIODE GEN PURP 75V 150MA SOD123 Vishay General Semiconductor - Diodes Division |
3,891 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 100 µA @ 100 V | 75 V | 150mA | -55°C ~ 150°C | 1.2 V @ 100 mA |
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V3PL45HM3/HSCHOTTKY RECTIFIER 3A 45V SMP Vishay General Semiconductor - Diodes Division |
3,446 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 550pF @ 4V, 1MHz | - | 450 µA @ 45 V | 45 V | 3A (DC) | -40°C ~ 150°C | 540 mV @ 3 A |
|
VSSAF5N50-M3/6ADIODE SCHOTTKY 50V 3A DO221AC Vishay General Semiconductor - Diodes Division |
2,560 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 850pF @ 4V, 1MHz | - | 1.4 mA @ 50 V | 50 V | 3A (DC) | -40°C ~ 150°C | 410 mV @ 2.5 A |
|
BAS21-HE3-08DIODE GEN PURP 200V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
3,727 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA |
|
SSA23L-E3/5ATDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,771 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 150°C | 450 mV @ 2 A | |
|
VIT5202-M3/4WDIODE SCHOTTKY 200V 5A TO262AA Vishay General Semiconductor - Diodes Division |
2,672 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 200 V | 200 V | 5A | -40°C ~ 175°C | 880 mV @ 5 A |
|
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MBRB1045-E3/81DIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,991 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A | |
|
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MBRB1060-E3/81DIODE SCHOTTKY 60V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,942 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
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SE30AFJ-M3/6BDIODE GEN PURP 600V 1.4A DO221AC Vishay General Semiconductor - Diodes Division |
3,380 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 1.4A (DC) | -55°C ~ 175°C | 1.1 V @ 3 A |
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SE20PAJ-M3/IDIODE GEN PURP 600V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
2,937 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 600 V | 600 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A | |
|
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1N4007GPE-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,877 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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