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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-SDE270M12MPBFMOD DIODE MAP COMPRESSED Vishay General Semiconductor - Diodes Division |
2,580 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
VS-SDE270M20MPBFMOD DIODE MAP COMPRESSED Vishay General Semiconductor - Diodes Division |
3,392 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
VS-STD170M12MPBFMODULE DIODE 1200V 170A MAGNAPAK Vishay General Semiconductor - Diodes Division |
3,287 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
VS-STD250M12MPBFMODULE DIODE 1200V 250A MAGNAPAK Vishay General Semiconductor - Diodes Division |
2,173 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
SSA34HE3_A/HDIODE SCHOTTKY 40V 3A DO214AC Vishay General Semiconductor - Diodes Division |
2,266 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 3A | -65°C ~ 150°C | 490 mV @ 3 A |
|
FES8JT-E3/45DIODE GEN PURP 600V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,402 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A | |
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VS-35APF06LHM3DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
3,269 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 35A | -40°C ~ 150°C | 1.46 V @ 35 A |
|
|
BYG10Y-E3/TR3DIODE AVALANCHE 1.6KV 1.5A Vishay General Semiconductor - Diodes Division |
3,725 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1600 V | 1600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
V10150S-E3/4WDIODE SCHOTTKY 150V 10A TO220AB Vishay General Semiconductor - Diodes Division |
3,702 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.2 V @ 10 A |
|
VS-35EPF06LHM3DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
2,869 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 160 ns | 100 µA @ 600 V | 600 V | 35A | -40°C ~ 150°C | 1.46 V @ 35 A |
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ES1PD-M3/84ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
VS-12FR20DIODE GEN PURP 200V 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,720 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 12 mA @ 200 V | 200 V | 12A | -65°C ~ 175°C | 1.26 V @ 38 A | |
|
MURS160-M3/52TDIODE GEN PURP 600V 1A DO214AA Vishay General Semiconductor - Diodes Division |
2,191 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A | |
|
GP02-30-E3/54DIODE GEN PURP 3KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
2,871 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 3000 V | 3000 V | 250mA | -65°C ~ 175°C | 3 V @ 1 A |
|
VBT2045BP-E3/4WDIODE SCHOTTKY 45V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,160 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 20A (DC) | 200°C (Max) | 660 mV @ 20 A |
|
SBYV27-150-E3/54DIODE GEN PURP 150V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,151 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 15 ns | 5 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 1.07 V @ 3 A | |
|
|
GI250-2-E3/54DIODE GEN PURP 2KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
2,651 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 2000 V | 2000 V | 250mA | -65°C ~ 175°C | 3.5 V @ 250 mA |
|
|
BYG10Y-M3/TRDIODE AVALANCHE 1.6KV 1.5A Vishay General Semiconductor - Diodes Division |
2,440 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1600 V | 1600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
|
|
GI250-4-E3/54DIODE GEN PURP 4KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
2,994 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 4000 V | 4000 V | 250mA | -65°C ~ 175°C | 3.5 V @ 250 mA |
|
VS-ETH0806FP-M3DIODE GEN PURP 600V 8A TO220-2 Vishay General Semiconductor - Diodes Division |
2,940 | - |
RFQ |
Ficha técnica |
Bulk | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 21 ns | 12 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.65 V @ 8 A |
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