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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VSSB410S-M3/52TDIODE SCHOTTKY 100V 1.9A DO214AA Vishay General Semiconductor - Diodes Division |
3,733 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 230pF @ 4V, 1MHz | - | 250 µA @ 100 V | 100 V | 1.9A (DC) | -40°C ~ 150°C | 770 mV @ 4 A |
|
S5JHE3_A/IDIODE GEN PURP 600V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,962 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 40pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 5A | -55°C ~ 150°C | 1.15 V @ 5 A |
|
VS-15ETH03S-M3DIODE GEN PURP 300V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,782 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 40 µA @ 300 V | 300 V | 15A | -65°C ~ 175°C | 1.25 V @ 15 A |
|
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VS-HFA15TB60S-M3DIODE GEN PURP 600V 15A D2PAK Vishay General Semiconductor - Diodes Division |
3,201 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 60 ns | 10 µA @ 600 V | 600 V | 15A (DC) | -55°C ~ 150°C | 2 V @ 30 A |
|
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SL23HE3_A/IDIODE SCHOTTKY 30V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,090 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 4V, 1MHz | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 125°C | 395 mV @ 1 A |
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VSS8D5M6HM3/H5A, 60V, SLIMSMAW TRENCH SKY REC Vishay General Semiconductor - Diodes Division |
2,310 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 620pF @ 4V, 1MHz | - | 350 µA @ 60 V | 60 V | 2.7A | -40°C ~ 175°C | 500 mV @ 2.5 A |
|
|
ES3F-E3/9ATDIODE GEN PURP 300V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,772 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
|
SBYV28-100-E3/73DIODE GEN PURP 100V 3.5A DO201AD Vishay General Semiconductor - Diodes Division |
3,711 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 20 ns | 5 µA @ 100 V | 100 V | 3.5A | -55°C ~ 150°C | 1.1 V @ 3.5 A | |
|
|
SB540A-E3/73DIODE SCHOTTKY 40V 5A DO201AD Vishay General Semiconductor - Diodes Division |
2,543 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 500 mV @ 5 A | |
|
|
UG4D-E3/73DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,990 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 200 V | 200 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
|
V8PM10SHM3/IDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,544 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 860pF @ 4V, 1MHz | - | 200 µA @ 100 V | 100 V | 8A | -40°C ~ 175°C | 780 mV @ 8 A |
|
VS-6F60DIODE GEN PURP 600V 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,751 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 12 mA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
|
BYM12-200-E3/96DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,124 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
BYM12-100-E3/96DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,170 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
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V8PM10S-M3/HDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
2,491 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 860pF @ 4V, 1MHz | - | 200 µA @ 100 V | 100 V | 8A | -40°C ~ 175°C | 780 mV @ 8 A |
|
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MURS360S-E3/52TDIODE GEN PURP 600V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,393 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 5 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.45 V @ 3 A | |
|
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SS5P9-M3/87ADIODE SCHOTTKY 90V 5A TO277A Vishay General Semiconductor - Diodes Division |
2,152 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 15 µA @ 90 V | 90 V | 5A | -55°C ~ 150°C | 880 mV @ 5 A |
|
RGL34J-E3/98DIODE GEN PURP 600V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,249 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 500mA | -65°C ~ 175°C | 1.3 V @ 500 mA |
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VS-65APS12LHM3DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division |
3,247 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 65A | -40°C ~ 150°C | 1.12 V @ 65 A |
|
|
SB360-E3/54DIODE SCHOTTKY 60V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,412 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 60 V | 60 V | 3A | -65°C ~ 150°C | 680 mV @ 3 A |
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