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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BAL99-E3-18DIODE GEN PURP 70V 250MA SOT23 Vishay General Semiconductor - Diodes Division |
3,157 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 6 ns | 2.5 µA @ 70 V | 70 V | 250mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
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BAS16-E3-18DIODE GEN PURP 75V 150MA SOT23 Vishay General Semiconductor - Diodes Division |
2,297 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 75 V | 150mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
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BAL99-E3-08DIODE GEN PURP 70V 250MA SOT23 Vishay General Semiconductor - Diodes Division |
3,932 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 6 ns | 2.5 µA @ 70 V | 70 V | 250mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
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V3PL45-M3/ISCHOTTKY RECTIFIER 3A 45V SMP Vishay General Semiconductor - Diodes Division |
3,994 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 550pF @ 4V, 1MHz | - | 450 µA @ 45 V | 45 V | 3A (DC) | -40°C ~ 150°C | 540 mV @ 3 A |
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IMBD4148-G3-08DIODE GEN PURP 75V 150MA SOT23 Vishay General Semiconductor - Diodes Division |
2,377 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 2.5 µA @ 70 V | 75 V | 150mA | 150°C (Max) | 1 V @ 10 mA | |
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S1FLK-GS18DIODE GEN PURP 800V 1A DO219AB Vishay General Semiconductor - Diodes Division |
3,904 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 800 V | 800 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
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IMBD4148-G3-18DIODE GEN PURP 75V 150MA SOT23 Vishay General Semiconductor - Diodes Division |
3,213 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 2.5 µA @ 70 V | 75 V | 150mA | 150°C (Max) | 1 V @ 10 mA | |
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S1FLK-GS08DIODE GP 800V 700MA DO219AB Vishay General Semiconductor - Diodes Division |
2,127 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 4pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 800 V | 800 V | 700mA | -55°C ~ 150°C | 1.1 V @ 1 A | |
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UH1PB-M3/85ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,195 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 40 ns | 1 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A | |
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VS-C40CP07L-M3DIODE SCHOTTKY 650V 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,123 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.04nF @ 1V, 1MHz | - | 100 µA @ 650 V | 650 V | 20A (DC) | -55°C ~ 175°C | 1.7 V @ 20 A | |
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UF1005-E3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,788 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | - | 600 V | 1A | -65°C ~ 150°C | 1.7 V @ 1 A | ||
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UH1PC-M3/85ADIODE GEN PURP 150V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,498 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 40 ns | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A | |
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UF1006-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,361 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 75 ns | 5 µA @ 800 V | 800 V | 1A | -40°C ~ 150°C | 1.7 V @ 1 A | ||
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V2PM12LHM3/ISCHOTTKY RECTIFIER 2A 120V SMP Vishay General Semiconductor - Diodes Division |
2,492 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 180pF @ 4V, 1MHz | - | 200 µA @ 120 V | 120 V | 1.8A (DC) | -40°C ~ 175°C | 620 mV @ 1 A |
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SE20PB-M3/85ADIODE GEN PURP 100V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
2,909 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 100 V | 100 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A | |
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V2PM15LHM3/ISCHOTTKY RECTIFIER 2A 150V SMP Vishay General Semiconductor - Diodes Division |
2,320 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 100 µA @ 150 V | 150 V | 1.7A (DC) | -40°C ~ 175°C | 760 mV @ 1 A |
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SE20PD-M3/85ADIODE GEN PURP 200V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
2,209 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 200 V | 200 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A | |
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V2PM10LHM3/ISCHOTTKY RECTIFIER 2A 100V SMP Vishay General Semiconductor - Diodes Division |
3,354 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 195pF @ 4V, 1MHz | - | 100 µA @ 5 V | 100 V | 1.9A (DC) | -40°C ~ 175°C | 550 mV @ 1 A |
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BAS19-HE3-18DIODE GEN PURP 100V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
2,659 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 200mA | -55°C ~ 150°C | 1.25 V @ 200 mA |
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S2GHM3_A/I1.5A 400V SMB STD GPP SM RECT Vishay General Semiconductor - Diodes Division |
2,864 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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