+86 075582561136
Carregar BOM
Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
B350A-M3/5ATDIODE SCHOTTKY 50V 3A DO214AC Vishay General Semiconductor - Diodes Division |
2,429 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 4V, 1MHz | - | 200 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 720 mV @ 3 A | |
|
S2BHE3_A/HDIODE GEN PURP 100V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,750 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
BAV17-TAPDIODE GEN PURP 20V 250MA DO35 Vishay General Semiconductor - Diodes Division |
3,535 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 20 V | 20 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
|
B350A-M3/61TDIODE SCHOTTKY 50V 3A DO214AC Vishay General Semiconductor - Diodes Division |
2,405 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 4V, 1MHz | - | 200 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 720 mV @ 3 A | |
|
BAL99-G3-18DIODE GEN PURP 70V 250MA SOT23 Vishay General Semiconductor - Diodes Division |
3,419 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 1.5pF @ 0V, 1MHz | 6 ns | 2.5 µA @ 70 V | 70 V | 250mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
|
S2DHE3_A/HDIODE GEN PURP 200V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,143 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 16pF @ 4V, 1MHz | 2 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
V3PM6-M3/ISCHOTTKY RECTIFIER 3A 60V SMP Vishay General Semiconductor - Diodes Division |
2,076 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 4V, 1MHz | - | 200 µA @ 60 V | 60 V | 2.4A | -40°C ~ 175°C | 500 mV @ 1.5 A |
|
|
BAV18-TAPDIODE GEN PURP 50V 250MA DO35 Vishay General Semiconductor - Diodes Division |
2,949 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 50 V | 50 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
|
BAS16-G3-18DIODE GEN PURP 75V 150MA SOT23 Vishay General Semiconductor - Diodes Division |
3,744 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 6 ns | 1 µA @ 75 V | 75 V | 150mA | -55°C ~ 150°C | 1.25 V @ 150 mA | |
|
SB250-E3/54DIODE SCHOTTKY 2A 50V DO-41 Vishay General Semiconductor - Diodes Division |
3,167 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 50 V | 50 V | 2A | -65°C ~ 150°C | 680 mV @ 2 A | |
|
|
V3P6L-M3/ISCHOTTKY RECTIFIER 3A 60V SMP Vishay General Semiconductor - Diodes Division |
2,600 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 450pF @ 4V, 1MHz | - | 900 µA @ 60 V | 60 V | 2.3A | -40°C ~ 150°C | 450 mV @ 1.5 A |
|
|
BAV19-TAPDIODE GEN PURP 100V 250MA DO35 Vishay General Semiconductor - Diodes Division |
3,501 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 100 V | 100 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
|
MMBD6050-G3-18DIODE GEN PURP 70V 200MA SOT23 Vishay General Semiconductor - Diodes Division |
2,021 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 4 ns | 100 nA @ 50 V | 70 V | 200mA | 150°C (Max) | 1.1 V @ 100 mA | |
|
|
BYS12-90-M3/TR3DIODE SCHOTTKY 90V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,497 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1.5A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
|
BAV17-TRDIODE GEN PURP 20V 250MA DO35 Vishay General Semiconductor - Diodes Division |
2,800 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 20 V | 20 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
BYM11-50-E3/96DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,149 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
BAV18-TRDIODE GEN PURP 50V 250MA DO35 Vishay General Semiconductor - Diodes Division |
3,521 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 50 V | 50 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA |
|
|
BYS11-90HE3_A/IDIODE SCHOTTKY 90V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,958 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q100 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1.5A | -55°C ~ 150°C | 750 mV @ 1 A |
|
|
US1AHE3_A/IDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,044 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
US1BHE3_A/IDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,033 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
