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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SE30PADHM3/IDIODE GEN PURP 200V 3A DO221BC Vishay General Semiconductor - Diodes Division |
3,884 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.3 µs | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.16 V @ 3 A |
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SD103CWS-HE3-08DIODE SCHOTTKY 350MA 20V SOD323 Vishay General Semiconductor - Diodes Division |
2,716 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 10 V | 20 V | 350mA (DC) | -55°C ~ 125°C | 600 mV @ 200 mA |
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RGF1M-7000HE3/5CADIODE GEN PURP 1KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,317 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 8.5pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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SB15H45-7000E3/54DIODE SCHOTTKY Vishay General Semiconductor - Diodes Division |
2,163 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 1020pF @ 4V, 1MHz | - | 300 µA @ 45 V | 45 V | 7A | -55°C ~ 175°C | 480 mV @ 5 A | ||
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VS-E4TU2006TFP-N3DIODE GEN PURP 600V 20A TO220-2 Vishay General Semiconductor - Diodes Division |
3,546 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 61 ns | 15 µA @ 600 V | 600 V | 20A | -55°C ~ 175°C | 1.63 V @ 20 A |
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SB15H45-7000E3/73DIODE SCHOTTKY Vishay General Semiconductor - Diodes Division |
3,873 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 1020pF @ 4V, 1MHz | - | 300 µA @ 45 V | 45 V | 7A | -55°C ~ 175°C | 480 mV @ 5 A | ||
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VS-30ETU12T-N3DIODE GEN PURP 30A TO220AC Vishay General Semiconductor - Diodes Division |
3,205 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 220 ns | 145 µA @ 1200 V | - | 30A | -55°C ~ 175°C | 2.68 V @ 30 A | |
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SS34-7000HE3_A/IDIODE SCHOTTKY Vishay General Semiconductor - Diodes Division |
3,918 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |
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VS-ETH3007T-N3DIODE GEN PURP 650V 30A TO220AC Vishay General Semiconductor - Diodes Division |
2,204 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 37 ns | 30 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 2.1 V @ 30 A | |
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SS34-7001HE3_A/IDIODE SCHOTTKY Vishay General Semiconductor - Diodes Division |
2,564 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 500 mV @ 3 A |
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VS-ETX3007T-N3DIODE GEN PURP 650V 30A TO220AC Vishay General Semiconductor - Diodes Division |
2,708 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 35 ns | 30 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 2.5 V @ 30 A | |
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VSB1545-5300M3/73DIODE SCHOTTKY P600 Vishay General Semiconductor - Diodes Division |
3,669 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 1290pF @ 4V, 1MHz | - | 800 µA @ 45 V | 45 V | 6A | -40°C ~ 150°C | 590 mV @ 15 A |
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NS8KT-7000HE3/45DIODE GEN PURP TO220AC Vishay General Semiconductor - Diodes Division |
3,101 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
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NS8KT-7002HE3/45DIODE GEN PURP TO220AC Vishay General Semiconductor - Diodes Division |
3,886 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
SB15H45L-5000E3/72DIODE SCHOTTKY Vishay General Semiconductor - Diodes Division |
3,954 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
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SB15H45L-7000E3/72DIODE SCHOTTKY Vishay General Semiconductor - Diodes Division |
2,664 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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VSB3200-M3/51DIODE SCHOTTKY DO201AD Vishay General Semiconductor - Diodes Division |
3,236 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | 175pF @ 4V, 1MHz | - | 60 µA @ 200 V | 200 V | 3A | -40°C ~ 150°C | 1.2 V @ 3 A | |
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BYG21KHE3_A/HDIODE AVALANCHE 800V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,670 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 120 ns | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.6 V @ 1.5 A |
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B350B-M3/5BTDIODE SCHOTTKY 50V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,879 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 660 mV @ 3 A | |
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SE30PAD-M3/IDIODE GEN PURP 200V 3A DO221BC Vishay General Semiconductor - Diodes Division |
2,385 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.3 µs | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.16 V @ 3 A |
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