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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RS3B-M3/9ATDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,018 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
1N4248GP-E3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,150 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 160°C | 1.2 V @ 1 A |
|
|
RS3D-M3/9ATDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,497 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 100 V | 200 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
|
BYW27-200GP-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,725 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | - | - | 200 V | 1A | -65°C ~ 175°C | - | |
|
|
RS3G-M3/9ATDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,610 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
CS1D-E3/HDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,112 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.12 V @ 1 A | |
|
|
CS1G-E3/HDIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,642 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.12 V @ 1 A | |
|
|
CS1J-E3/HDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,748 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.12 V @ 1 A | |
|
|
CS1K-E3/HDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,977 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.12 V @ 1 A | |
|
|
BYW27-400GP-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,223 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 200 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A | |
|
VS-3EGU06WHM3/5BTDIODE GEN PURP 600V 3A SMB Vishay General Semiconductor - Diodes Division |
2,260 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 65 ns | 3 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.35 V @ 3 A |
|
|
RS2A-E3/52TDIODE GEN PURP 50V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,630 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
EGP10A-E3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,456 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
|
RS2A-E3/5BTDIODE GEN PURP 50V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
3,289 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
|
EGP10B-E3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,254 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A |
|
|
RS2B-E3/5BTDIODE GEN PURP 100V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,157 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 1.3 V @ 1.5 A | |
|
MUH1PC-M3/89ADIODE GEN PURP 150V 1A MICROSMP Vishay General Semiconductor - Diodes Division |
2,811 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
|
EGP10F-E3/54DIODE GEN PURP 300V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,943 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
|
|
GP08D-E3/54DIODE GEN PURP 200V 800MA DO204 Vishay General Semiconductor - Diodes Division |
3,316 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 200 V | 200 V | 800mA | -65°C ~ 175°C | 1.3 V @ 800 mA |
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SS3P5-M3/85ADIODE SCHOTTKY 50V 3A DO220AA Vishay General Semiconductor - Diodes Division |
2,087 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 780 mV @ 3 A |
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