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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP08G-E3/54DIODE GEN PURP 400V 800MA DO204 Vishay General Semiconductor - Diodes Division |
3,393 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 400 V | 400 V | 800mA | -65°C ~ 175°C | 1.3 V @ 800 mA |
|
SSA33LHE3_A/HDIODE SCHOTTKY 30V 3A DO214AC Vishay General Semiconductor - Diodes Division |
2,702 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -65°C ~ 150°C | 450 mV @ 3 A |
|
CS1M-E3/HDIODE GEN PURP 1KV 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,928 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 6pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.12 V @ 1 A | |
|
|
CS2D-E3/HDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,756 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.2 V @ 2 A | |
|
|
CS2G-E3/HDIODE GEN PURP 400V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,671 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.2 V @ 2 A | |
|
|
CS2J-E3/HDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,613 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.2 V @ 2 A | |
|
|
CS2K-E3/HDIODE GEN PURP 800V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,139 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 800 V | 800 V | 2A | -55°C ~ 150°C | 1.2 V @ 2 A | |
|
|
CS2M-E3/HDIODE GEN PURP 1KV 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,449 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 2.1 µs | 5 µA @ 1000 V | 1000 V | 2A | -55°C ~ 150°C | 1.2 V @ 2 A | |
|
|
CS3D-E3/HDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,932 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 26pF @ 4V, 1MHz | 2.8 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 150°C | 1.2 V @ 3 A | |
|
SE10FDHM3/HDIODE GEN PURP 200V 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,190 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.5pF @ 4V, 1MHz | 780 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
|
GP08J-E3/54DIODE GEN PURP 600V 800MA DO204 Vishay General Semiconductor - Diodes Division |
2,640 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 5 µA @ 600 V | 600 V | 800mA | -65°C ~ 175°C | 1.3 V @ 800 mA |
|
|
CS3G-E3/HDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,862 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 26pF @ 4V, 1MHz | 2.8 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.2 V @ 3 A | |
|
ESH2B-E3/5BTDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,223 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | |
|
|
CS3J-E3/HDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,231 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 26pF @ 4V, 1MHz | 2.8 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.2 V @ 3 A | |
|
|
SE10FDHM3/IDIODE GEN PURP 200V 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,683 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.5pF @ 4V, 1MHz | 780 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
|
GP10-4002-E3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,996 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 1A | - | - | |
|
|
ESH2C-E3/5BTDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,656 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | |
|
|
SE10FGHM3/IDIODE GEN PURP 400V 1A DO219AB Vishay General Semiconductor - Diodes Division |
2,047 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7.5pF @ 4V, 1MHz | 780 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
|
GP10-4003-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,715 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 200 V | 1A | - | - | |
|
|
ESH2B-E3/52TDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,032 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
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