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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NSF8ATHE3_B/PDIODE GENERAL PURPOSE Vishay General Semiconductor - Diodes Division |
2,816 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
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BYG22D-M3/TRDIODE AVALANCHE 200V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,101 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
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RMPG06BHE3_A/53DIODE GPP 1A 100V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,747 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
VS-3EJH01-M3/6ADIODE GEN PURP 100V 3A DO221AC Vishay General Semiconductor - Diodes Division |
2,055 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 18 ns | 2 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 930 mV @ 3 A |
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SE10PBHM3/84ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,759 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 780 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
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RMPG06D-E3/100DIODE GPP 1A 200V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,915 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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SE10PDHM3/84ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,718 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 780 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
GF1G-9HE3_A/IDIODE GENERAL PURPOSE Vishay General Semiconductor - Diodes Division |
3,915 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
RMPG06D-E3/53DIODE GPP 1A 200V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,406 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
|
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SE10PGHM3/84ADIODE GEN PURP 400V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,430 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 780 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
|
|
RMPG06DHE3_A/53DIODE GPP 1A 200V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,677 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
SB2H90-E3/73DIODE SCHOTTKY 90V 2A DO204AC Vishay General Semiconductor - Diodes Division |
2,094 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 10 µA @ 90 V | 90 V | 2A | -55°C ~ 175°C | 790 mV @ 2 A | ||
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ES1BHM3_A/H1A 100V SM ULTRAFAST RECT SMA Vishay General Semiconductor - Diodes Division |
2,233 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
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SE10PJHM3/84ADIODE GEN PURP 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,434 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 780 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 175°C | 1.05 V @ 1 A |
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RMPG06G-E3/100DIODE GPP 1A 400V 150NS MPG06 Vishay General Semiconductor - Diodes Division |
2,474 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
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US1J-E3S/61TDIODE GEN PURP 600V Vishay General Semiconductor - Diodes Division |
3,012 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
V15PN50-5700M3/86ADIODE SCHOTTKY 50V 15A Vishay General Semiconductor - Diodes Division |
3,429 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 3 mA @ 50 V | 50 V | 15A | -40°C ~ 150°C | 560 mV @ 15 A | ||
|
EGP10AE-E3/54DIODE RECTIFIER Vishay General Semiconductor - Diodes Division |
2,072 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 22pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 150°C | 950 mV @ 1 A | |
|
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NSF8AT-E3/45DIODE GENERAL PURPOSE Vishay General Semiconductor - Diodes Division |
3,183 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 55pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
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S1J-6605E3/61TDIODE GEN PURP 600V Vishay General Semiconductor - Diodes Division |
2,827 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 12pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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