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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-8ETU12-N3DIODE GEN PURP 1.2KV 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,495 | - |
RFQ |
Ficha técnica |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 144 ns | 55 µA @ 1200 V | 1200 V | 8A | -55°C ~ 175°C | 2.55 V @ 8 A |
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VS-ETU3006FP-M3RDIODE Vishay General Semiconductor - Diodes Division |
3,236 | - |
RFQ |
Ficha técnica |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
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SE20PGHM3/84ADIODE GEN PURP 400V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
3,196 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 400 V | 400 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A |
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RS3K-M3/9ATDIODE GEN PURP 800V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,444 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 34pF @ 4V, 1MHz | 500 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
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SE20PJHM3/84ADIODE GEN PURP 600V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
2,775 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 600 V | 600 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A |
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RS3J-M3/57TDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,907 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 34pF @ 4V, 1MHz | 250 ns | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
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RS3A-M3/57TDIODE GEN PURP 50V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,267 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 44pF @ 4V, 1MHz | 150 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
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VS-1EFH02-M3/IDIODE GEN PURP 200V 1A SMF Vishay General Semiconductor - Diodes Division |
2,907 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 16 ns | 2 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 930 mV @ 1 A |
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RS3K-M3/57TDIODE GEN PURP 800V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,821 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 34pF @ 4V, 1MHz | 500 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
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VS-2EGH01-M3/5BTDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,436 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 23 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 900 mV @ 2 A |
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VS-2EGH02-M3/5BTDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,409 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 23 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 900 mV @ 2 A |
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MPG06AHE3_A/54DIODE GEN PURP 50V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,477 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
U2B-E3/52TDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,556 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 27 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
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MPG06BHE3_A/54DIODE GEN PURP 100V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,797 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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U2C-E3/52TDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,458 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 27 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
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MPG06GHE3_A/54DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,986 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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MPG06JHE3_A/54DIODE GEN PURP 600V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,804 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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MPG06KHE3_A/54DIODE GEN PURP 800V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,635 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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MPG06MHE3_A/54DIODE GEN PURP 1KV 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,648 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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MPG06DHE3_A/54DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,812 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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