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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS1FH10HM3/IDIODE SCHOTTKY 100V 1A DO-219AB Vishay General Semiconductor - Diodes Division |
2,658 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 800 mV @ 1 A |
|
EGP31B-E3/DDIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,628 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 1 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
|
EGP31C-E3/DDIODE GEN PURP 150V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,646 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 1 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
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EGP31D-E3/DDIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,809 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 2 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 950 mV @ 3 A |
|
|
EGP31F-E3/DDIODE GEN PURP 300V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,922 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 48pF @ 4V, 1MHz | 50 ns | 3 µA @ 300 V | 300 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A |
|
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EGP31G-E3/DDIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,596 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 48pF @ 4V, 1MHz | 50 ns | 4 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A |
|
|
EGP51A-E3/DDIODE GEN PURP 50V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,256 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A |
|
GP10-4006E-E3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,474 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 800 V | 1A | - | - | ||
|
|
VSSAF510-M3/IDIODE SCHOTTKY 100V 5A DO221AC Vishay General Semiconductor - Diodes Division |
2,715 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 440pF @ 4V, 1MHz | - | 500 µA @ 100 V | 100 V | 5A | -40°C ~ 150°C | 750 mV @ 5 A |
|
|
SB110-E3/54DIODE SCHOTTKY 10V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,326 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 10 V | 10 V | 1A | -55°C ~ 125°C | 480 mV @ 1 A | ||
|
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GP10-4007E-E3/54DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,751 | - |
RFQ |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 1000 V | 1A | - | - | ||
|
|
VSSAF512-M3/HDIODE SCHOTTKY 120V 5A DO221AC Vishay General Semiconductor - Diodes Division |
2,332 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 360pF @ 4V, 1MHz | - | 400 µA @ 120 V | 120 V | 5A | -40°C ~ 150°C | 880 mV @ 5 A |
|
MURS120HE3_A/IDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,109 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -65°C ~ 175°C | 875 mV @ 1 A |
|
|
SB120-E3/54DIODE SCHOTTKY 20V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,551 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 1A | -65°C ~ 125°C | 480 mV @ 1 A | |
|
|
GP10BE-E3/54DIODE GEN PURP 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,488 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
VSSAF512-M3/IDIODE SCHOTTKY 120V 5A DO221AC Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 360pF @ 4V, 1MHz | - | 400 µA @ 120 V | 120 V | 5A | -40°C ~ 150°C | 880 mV @ 5 A |
|
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BYG22AHE3_A/HDIODE AVALANCHE 50V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,062 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 25 ns | 1 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A |
|
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GP10DE-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,762 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 8pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
VSSAF515-M3/HDIODE SCHOTTKY 150V 5A DO221AC Vishay General Semiconductor - Diodes Division |
3,931 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 280pF @ 4V, 1MHz | - | 200 µA @ 150 V | 150 V | 5A | -40°C ~ 150°C | 1.1 V @ 5 A |
|
|
EGP51B-E3/DDIODE GEN PURP 100V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,928 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 117pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 5A | -65°C ~ 175°C | 960 mV @ 5 A |
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