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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EGL34CHE3_A/HDIODE GEN PURP 150V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,477 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
BYT51D-TAPDIODE AVALANCHE 200V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,705 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
AS4PD-M3/87ADIODE AVALANCHE 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,450 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
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EGL34DHE3_A/HDIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,731 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
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BYT52A-TAPDIODE AVALANCHE 50V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,005 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 50 V | 50 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
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AS4PG-M3/87ADIODE AVALANCHE 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,275 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
EGL34FHE3_A/HDIODE GEN PURP 300V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,708 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA |
|
|
BYT52B-TAPDIODE AVALANCHE 100V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
3,819 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 100 V | 100 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
|
AS4PJ-M3/87ADIODE AVALANCHE 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,403 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
EGL34GHE3_A/HDIODE GEN PURP 400V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,290 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA |
|
|
BYT54A-TAPDIODE AVALANCHE 50V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
2,152 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 50 V | 50 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
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V10PM6-M3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
2,890 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1650pF @ 4V, 1MHz | - | 800 µA @ 60 V | 60 V | 10A | -40°C ~ 175°C | 640 mV @ 10 A |
|
|
AS3PM-M3/86ADIODE AVALANCHE 1KV 2.1A TO277 Vishay General Semiconductor - Diodes Division |
3,993 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 1000 V | 1000 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
|
BYT54B-TAPDIODE AVALANCHE 100V 1.25A SOD57 Vishay General Semiconductor - Diodes Division |
3,590 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 100 V | 100 V | 1.25A | -55°C ~ 175°C | 1.5 V @ 1 A | |
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SGL41-50HE3/97DIODE SCHOTTKY 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,091 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
AS3PK-M3/86ADIODE AVALANCHE 800V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,689 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 800 V | 800 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
|
BYV12-TAPDIODE AVALANCHE 100V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
2,548 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 300 ns | 5 µA @ 100 V | 100 V | 1.5A | -55°C ~ 175°C | 1.5 V @ 1 A | |
|
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SGL41-60HE3/97DIODE SCHOTTKY 60V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,613 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
AS4PG-M3/86ADIODE AVALANCHE 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,420 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
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SS1P3LHM3/85ADIODE SCHOTTKY 30V 1.5A DO220AA Vishay General Semiconductor - Diodes Division |
3,104 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 1.5A | -55°C ~ 150°C | 450 mV @ 1 A |
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