+86 075582561136
Carregar BOM
Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
;;2.jpg)
|
BYM13-20-E3/97DIODE SCHOTTKY 20V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,414 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 20 V | 20 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
|
BYM13-30-E3/97DIODE SCHOTTKY 30V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,270 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 500 µA @ 30 V | 30 V | 1A | -55°C ~ 125°C | 500 mV @ 1 A | |
|
V8P20-M3/86ADIODE SCHOTTKY 200V 2.2A TO277A Vishay General Semiconductor - Diodes Division |
3,584 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 200 V | 200 V | 2.2A | -40°C ~ 150°C | 1.4 V @ 8 A |
|
|
AS3PD-M3/87ADIODE AVALANCHE 200V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,075 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 200 V | 200 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
|
V8P20-M3/87ADIODE SCHOTTKY 200V 2.2A TO277A Vishay General Semiconductor - Diodes Division |
3,258 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 200 V | 200 V | 2.2A | -40°C ~ 150°C | 1.4 V @ 8 A | |
|
MUR420-M3/73DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,422 | - |
RFQ |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A | ||
|
|
AS3PG-M3/87ADIODE AVALANCHE 400V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,591 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 400 V | 400 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
|
MUR440-M3/54DIODE GEN PURP 400V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,690 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 400 V | 400 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A | |
|
|
AS3PJ-M3/87ADIODE AVALANCHE 600V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,580 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 600 V | 600 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
|
MUR460-M3/54DIODE GEN PURP 600V 4A DO201AD Vishay General Semiconductor - Diodes Division |
2,036 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A | |
|
|
AS3PJ-M3/86ADIODE AVALANCHE 600V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,674 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 600 V | 600 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
VS-3EGU06-M3/5BTDIODE GEN PURP 600V 3A SMB Vishay General Semiconductor - Diodes Division |
3,078 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 3 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A |
|
|
AS3PD-M3/86ADIODE AVALANCHE 200V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,243 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 200 V | 200 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
~~2.jpg)
|
ES1PBHM3/85ADIODE GEN PURP 100V 1A DO220AA Vishay General Semiconductor - Diodes Division |
3,252 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
|
ES1PCHM3/85ADIODE GEN PURP 150V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,463 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
|
MUR420-M3/54DIODE GEN PURP 200V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,973 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 890 mV @ 4 A | ||
|
V10PM6HM3/IRECTIFIER BARRIER SCHOTTKY TO-27 Vishay General Semiconductor - Diodes Division |
3,114 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1650pF @ 4V, 1MHz | - | 800 µA @ 60 V | 60 V | 10A | -40°C ~ 175°C | 640 mV @ 10 A |
|
|
SB320-E3/73DIODE SCHOTTKY 20V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,363 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 20 V | 20 V | 3A | -65°C ~ 150°C | 490 mV @ 3 A | |
|
|
1N5820-E3/73DIODE SCHOTTKY 20V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,838 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 2 mA @ 20 V | 20 V | 3A | -65°C ~ 125°C | 475 mV @ 3 A | |
|
1N4006-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,503 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
