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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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NSB8KTHE3_B/PDIODE GEN PURP 800V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,253 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
SE40PG-M3/86ADIODE GEN PURP 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,237 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 400 V | 400 V | 2.4A (DC) | -55°C ~ 175°C | 920 mV @ 2 A | |
|
|
NSB8MTHE3_B/PDIODE GEN PURP 1KV 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,816 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 55pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A |
|
|
SE40PJ-M3/86ADIODE GEN PURP 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,824 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 2.2 µs | 10 µA @ 600 V | 600 V | 2.4A (DC) | -55°C ~ 175°C | 920 mV @ 2 A | |
|
VFT760-E3/4WDIODE SCHOTTKY 7.5A 60V ITO-220A Vishay General Semiconductor - Diodes Division |
2,881 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 60 V | 60 V | 7.5A | -55°C ~ 150°C | 800 mV @ 7.5 A | |
|
|
MBRB1060HE3_B/PDIODE SCHOTTKY 60V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,319 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
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MBRB10H100-E3/81DIODE SCHOTTKY 100V 10A TO236AB Vishay General Semiconductor - Diodes Division |
703 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 4.5 µA @ 100 V | 100 V | 10A | -65°C ~ 175°C | 770 mV @ 10 A | |
|
|
VS-HFA06TB120S-M3DIODE GEN PURP 1.2KV 6A D2PAK Vishay General Semiconductor - Diodes Division |
384 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 80 ns | 5 µA @ 1200 V | 1200 V | 6A (DC) | -55°C ~ 150°C | 3.9 V @ 12 A |
|
MBR1660-E3/45DIODE SCHOTTKY 60V 16A TO220AB Vishay General Semiconductor - Diodes Division |
292 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 60 V | 60 V | 16A | -65°C ~ 150°C | 750 mV @ 16 A | |
|
VS-19TQ015-M3DIODE SCHOTTKY 15V 19A TO220AC Vishay General Semiconductor - Diodes Division |
3,835 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 2000pF @ 5V, 1MHz | - | 10.5 mA @ 15 V | 15 V | 19A | -55°C ~ 125°C | 460 mV @ 38 A | |
|
|
VS-HFA25TB60-M3DIODE FRED 600V 25A TO220AC Vishay General Semiconductor - Diodes Division |
803 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 20 µA @ 600 V | 600 V | 25A | -55°C ~ 150°C | 2 V @ 50 A |
|
FESF16JT-E3/45DIODE GEN PURP 600V 16A ITO220AC Vishay General Semiconductor - Diodes Division |
998 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 16A | -65°C ~ 150°C | 1.5 V @ 16 A | |
|
1N5418-TAPDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,841 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 200 V | 400 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
|
MBRB1060HE3_B/IDIODE SCHOTTKY 60V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,698 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A |
|
|
1N5417-TAPDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,696 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
|
BY228-13TAPDIODE AVALANCHE 1KV 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,948 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 2 µs | 5 µA @ 1000 V | 1000 V | 3A | 140°C (Max) | 1.5 V @ 5 A | |
|
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BYT56A-TAPDIODE AVALANCHE 50V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,481 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 50 V | 50 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
|
BYM36C-TAPDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,505 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.6 V @ 3 A | |
|
|
BYT56B-TAPDIODE AVALANCHE 100V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,520 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A | |
|
|
BYT56G-TAPDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,406 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 5 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.4 V @ 3 A |
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