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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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V30100SG-M3/4WDIODE SCHOTTKY 30A 100V TO-220AB Vishay General Semiconductor - Diodes Division |
3,378 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 1 V @ 30 A |
|
VS-MBRB735TRR-M3DIODE SCHOTTKY 35V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,965 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 570 mV @ 7.5 A | |
|
VS-5EWH06FNHM3DIODE GEN PURP 600V 5A D-PAK Vishay General Semiconductor - Diodes Division |
3,961 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 5 µA @ 600 V | 600 V | 5A | -65°C ~ 175°C | 1.85 V @ 5 A |
|
BYV29-300-E3/45DIODE GEN PURP 300V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,920 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A | |
|
|
UGB8ATHE3_A/IDIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,644 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1 V @ 8 A |
|
|
UG8AT-E3/45DIODE GEN PURP 50V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,055 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
|
|
UGB8BTHE3_A/IDIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,433 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1 V @ 8 A |
|
|
UG8BT-E3/45DIODE GEN PURP 100V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,886 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
|
|
UGB8CTHE3_A/IDIODE GEN PURP 150V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,705 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 1 V @ 8 A |
|
|
UG8CT-E3/45DIODE GEN PURP 150V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,025 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 10 µA @ 150 V | 150 V | 8A | -55°C ~ 150°C | 1 V @ 8 A | |
|
SS3P5LHM3_A/IDIODE SCHOTTKY 50V 3A TO277A Vishay General Semiconductor - Diodes Division |
3,442 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 600 mV @ 3 A |
|
VI20150SG-E3/4WDIODE SCHOTTKY 150V 20A TO262AA Vishay General Semiconductor - Diodes Division |
2,132 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A |
|
|
UGB8DTHE3_A/IDIODE GEN PURP 200V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,287 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 200 V | 200 V | 8A | -55°C ~ 150°C | 1 V @ 8 A |
|
|
UG8FT-E3/45DIODE GEN PURP 300V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,258 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A | |
|
VS-6TQ035HN3DIODE SCHOTTKY 35V 6A TO220AC Vishay General Semiconductor - Diodes Division |
2,318 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 400pF @ 5V, 1MHz | - | 800 µA @ 35 V | 35 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A |
|
|
UGB8ATHE3_A/PDIODE GEN PURP 50V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,718 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 1 V @ 8 A |
|
|
UG8GT-E3/45DIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,783 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A | |
|
|
V20100S-M3/4WDIODE SCHOTTKY 20A 100V TO-220AB Vishay General Semiconductor - Diodes Division |
2,413 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 1.07 V @ 20 A | |
|
|
UGB8BTHE3_A/PDIODE GEN PURP 100V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,803 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 1 V @ 8 A |
|
VF10150S-M3/4WDIODE SCHOTTKY 10A 150V ITO220AB Vishay General Semiconductor - Diodes Division |
3,535 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.2 V @ 10 A |
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