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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-123NQ100PBF DIODE SCHOTTKY 100V 120A D-67 Vishay General Semiconductor - Diodes Division	3,304	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Chassis Mount	2650pF @ 5V, 1MHz	-	3 mA @ 100 V	100 V	120A	-55°C ~ 175°C	910 mV @ 120 A
1N5803/TR RECTIFIER UFR,FRR Microchip Technology	3,278	-	RFQ		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 10V, 1MHz	25 ns	1 µA @ 75 V	75 V	1A	-65°C ~ 175°C	875 mV @ 1 A
UF5406 R-600V 3A ULTRA FAST NTE Electronics, Inc	610	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	36pF @ 4V, 1MHz	75 ns	10 µA @ 600 V	600 V	3A	-	1.7 V @ 3 A
JANTXV1N4246 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	3,223	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/286	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	5 µs	1 µA @ 400 V	400 V	1A	-65°C ~ 175°C	1.3 V @ 3 A
E4D20120G 1200 V 20 A SCHOTTKY DIODE (SING Wolfspeed, Inc.	3,418	-	RFQ	Ficha técnica	Tube	E-Series, Automotive	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	1474pF @ 0V, 1MHz	0 ns	200 µA @ 200 µA	1200 V	56A (DC)	-55°C ~ 175°C	1.8 V @ 20 A
RFUH10TB4SNZC9 SUPER FAST RECOVERY DIODE : RFUH Rohm Semiconductor	2,282	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	25 ns	10 µA @ 430 V	430 V	10A	150°C	1.7 V @ 10 A
P2000D DIODE STD D8X7.5 200V 20A Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 200 V	200 V	20A	-50°C ~ 150°C	1.1 V @ 20 A
BYW172G-TAP DIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division	3,742	-	RFQ	Ficha técnica	Tape & Box (TB)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	100 ns	1 µA @ 400 V	400 V	3A	-55°C ~ 175°C	1.5 V @ 9 A
1N3890 DIODE GEN PURP 100V 12A DO4 GeneSiC Semiconductor	3,863	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 50 V	100 V	12A	-65°C ~ 150°C	1.4 V @ 12 A
GP3D050A120B SIC SCHOTTKY DIODE 1200V TO247-2 SemiQ	3,178	-	RFQ	Ficha técnica	Tube	Amp+™	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	3040pF @ 1V, 1MHz	0 ns	100 µA @ 1200 V	1200 V	50A	-55°C ~ 175°C	1.7 V @ 50 A
P2000J DIODE STD D8X7.5 600V 20A Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 600 V	600 V	20A	-50°C ~ 150°C	1.1 V @ 20 A
FX2000B DIODE FR D8X7.5_LOWRTH 100V 20A Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	200 ns	5 µA @ 100 V	100 V	20A	-50°C ~ 150°C	940 mV @ 20 A
P2000K DIODE STD D8X7.5 800V 20A Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 800 V	800 V	20A	-50°C ~ 150°C	1.1 V @ 20 A
VS-6ESU06-M3/86A DIODE GEN PURP 600V 6A TO277A Vishay General Semiconductor - Diodes Division	3,638	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	58 ns	5 µA @ 600 V	600 V	6A	-65°C ~ 175°C	1.3 V @ 6 A
FX20K150 DIODE FR D8X7.5_LOWRTH 150V 20A Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	300 ns	5 µA @ 150 V	150 V	20A	-50°C ~ 175°C	940 mV @ 20 A
UF5400-E3/54 DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division	2,670	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	45pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	3A	-55°C ~ 150°C	1 V @ 3 A
VS-95PFR120 DIODE GEN PURP 1.2KV 95A DO203AB Vishay General Semiconductor - Diodes Division	2,090	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	-	1200 V	95A	-55°C ~ 180°C	1.4 V @ 267 A
VS-80PF120W DIODE GEN PURP 1.2KV 80A DO203AB Vishay General Semiconductor - Diodes Division	2,862	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Stud Mount	-	-	-	1200 V	80A	-55°C ~ 180°C	1.4 V @ 220 A
JAN1N5620US DIODE GEN PURP 800V 1A D5A Microchip Technology	2,040	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/427	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	2 µs	500 nA @ 800 V	800 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
RFN10TB4SNZC9 SUPER FAST RECOVERY DIODE : RFN1 Rohm Semiconductor	3,615	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	30 ns	10 µA @ 430 V	430 V	10A	150°C	1.55 V @ 10 A