Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
RFN5BGE3STL

RFN5BGE3STL

SUPER FAST RECOVERY DIODE

Rohm Semiconductor
3,686 -

RFQ

RFN5BGE3STL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 10 µA @ 350 V 350 V 5A 150°C (Max) 1.5 V @ 5 A
SR106 A0G

SR106 A0G

DIODE SCHOTTKY 60V 1A DO204AL

Taiwan Semiconductor Corporation
243 -

RFQ

SR106 A0G

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 60 V 60 V 1A -55°C ~ 150°C 700 mV @ 1 A
AS3PG-M3/86A

AS3PG-M3/86A

DIODE AVALANCHE 400V 2.1A TO277A

Vishay General Semiconductor - Diodes Division
2,834 -

RFQ

AS3PG-M3/86A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Surface Mount 37pF @ 4V, 1MHz 1.2 µs 10 µA @ 400 V 400 V 2.1A (DC) -55°C ~ 175°C 920 mV @ 1.5 A
RS3DB-13-F

RS3DB-13-F

DIODE GEN PURP 200V 3A SMB

Diodes Incorporated
241 -

RFQ

RS3DB-13-F

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 50pF @ 4V, 1MHz 150 ns 5 µA @ 200 V 200 V 3A -65°C ~ 150°C 1.3 V @ 3 A
ES3A-E3/57T

ES3A-E3/57T

DIODE GEN PURP 50V 3A DO214AB

Vishay General Semiconductor - Diodes Division
2,829 -

RFQ

ES3A-E3/57T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 45pF @ 4V, 1MHz 30 ns 10 µA @ 50 V 50 V 3A -55°C ~ 150°C 900 mV @ 3 A
GI506-E3/54

GI506-E3/54

DIODE GEN PURP 600V 3A DO201AD

Vishay General Semiconductor - Diodes Division
167 -

RFQ

GI506-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 28pF @ 4V, 1MHz 2 µs 5 µA @ 600 V 600 V 3A -50°C ~ 150°C 1.1 V @ 9.4 A
ES3F-E3/57T

ES3F-E3/57T

DIODE GEN PURP 300V 3A DO214AB

Vishay General Semiconductor - Diodes Division
3,111 -

RFQ

ES3F-E3/57T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 30pF @ 4V, 1MHz 50 ns 10 µA @ 300 V 300 V 3A -55°C ~ 150°C 1.1 V @ 3 A
FR12G05

FR12G05

DIODE GEN PURP 400V 12A DO4

GeneSiC Semiconductor
3,773 -

RFQ

FR12G05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 400 V 12A -65°C ~ 150°C 800 mV @ 12 A
VS-60EPF02-M3

VS-60EPF02-M3

DIODE GEN PURP 200V 60A TO247AC

Vishay General Semiconductor - Diodes Division
2,535 -

RFQ

VS-60EPF02-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 200 V 200 V 60A -40°C ~ 150°C 1.3 V @ 60 A
VS-12TQ035STRL-M3

VS-12TQ035STRL-M3

DIODE SCHOTTKY 35V 15A D2PAK

Vishay General Semiconductor - Diodes Division
3,357 -

RFQ

VS-12TQ035STRL-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 900pF @ 5V, 1MHz - 1.75 mA @ 35 V 35 V 15A -55°C ~ 150°C 560 mV @ 15 A
VS-40HFR20

VS-40HFR20

DIODE GEN PURP 200V 40A DO203AB

Vishay General Semiconductor - Diodes Division
3,181 -

RFQ

VS-40HFR20

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - 9 mA @ 200 V 200 V 40A -65°C ~ 190°C 1.3 V @ 125 A
VS-1N1186A

VS-1N1186A

DIODE GEN PURP 200V 40A DO203AB

Vishay General Semiconductor - Diodes Division
3,833 -

RFQ

VS-1N1186A

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 2.5 mA @ 200 V 200 V 40A -65°C ~ 200°C 1.3 V @ 126 A
FESF8CTHE3_A/P

FESF8CTHE3_A/P

DIODE GEN PURP 150V 8A ITO220AC

Vishay General Semiconductor - Diodes Division
3,622 -

RFQ

FESF8CTHE3_A/P

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 150 V 150 V 8A -55°C ~ 150°C 950 mV @ 8 A
FR12J05

FR12J05

DIODE GEN PURP 600V 12A DO4

GeneSiC Semiconductor
2,611 -

RFQ

FR12J05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 500 ns 25 µA @ 100 V 600 V 12A -65°C ~ 150°C 800 mV @ 12 A
VS-60EPF04-M3

VS-60EPF04-M3

DIODE GEN PURP 400V 60A TO247AC

Vishay General Semiconductor - Diodes Division
2,189 -

RFQ

VS-60EPF04-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 100 µA @ 400 V 400 V 60A -40°C ~ 150°C 1.3 V @ 60 A
VS-12TQ035STRR-M3

VS-12TQ035STRR-M3

DIODE SCHOTTKY 35V 15A D2PAK

Vishay General Semiconductor - Diodes Division
3,113 -

RFQ

VS-12TQ035STRR-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 900pF @ 5V, 1MHz - 1.75 mA @ 35 V 35 V 15A -55°C ~ 155°C 560 mV @ 15 A
VS-16FL40S02

VS-16FL40S02

DIODE GEN PURP 400V 16A DO203AA

Vishay General Semiconductor - Diodes Division
2,996 -

RFQ

VS-16FL40S02

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 50 µA @ 400 V 400 V 16A -65°C ~ 150°C 1.4 V @ 16 A
CDLL5819E3

CDLL5819E3

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology
3,644 -

RFQ

CDLL5819E3

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 70pF @ 5V, 1MHz - 50 µA @ 45 V 45 V 1A -65°C ~ 125°C 490 mV @ 1 A
FESF8DTHE3_A/P

FESF8DTHE3_A/P

DIODE GEN PURP 200V 8A ITO220AC

Vishay General Semiconductor - Diodes Division
3,229 -

RFQ

FESF8DTHE3_A/P

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 950 mV @ 8 A
JANTXV1N4249

JANTXV1N4249

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology
3,212 -

RFQ

JANTXV1N4249

Ficha técnica

Bulk Military, MIL-PRF-19500/286 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 5 µs 1 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 3 A
Total 50121 Record«Prev1... 118119120121122123124125...2507Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário