Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N486A

1N486A

ZENER DIODE

Microchip Technology
2,277 -

RFQ

Bulk RoHS - - Active - - - - - - - -
1N647-1/TR

1N647-1/TR

SIGNAL/COMPUTER DIODE

Microchip Technology
3,165 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 50 nA @ 400 V 400 V 400mA -65°C ~ 175°C 1 V @ 400 mA
1N5618/TR

1N5618/TR

STD RECTIFIER

Microchip Technology
2,627 -

RFQ

1N5618/TR

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 600 V 600 V 1A -65°C ~ 200°C 1.3 V @ 3 A
1N5712-1/TR

1N5712-1/TR

DIODE SMALL-SIGNAL SCHOTTKY

Microchip Technology
2,653 -

RFQ

1N5712-1/TR

Ficha técnica

Tape & Reel (TR) Military, MIL-PRF-19500/444 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Through Hole 2pF @ 0V, 1MHz - 150 nA @ 16 V 20 V 75mA -65°C ~ 150°C 1 V @ 35 mA
1N5614/TR

1N5614/TR

STD RECTIFIER

Microchip Technology
3,351 -

RFQ

1N5614/TR

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 200 V 200 V 1A -65°C ~ 200°C 1.3 V @ 3 A
1N5617E3

1N5617E3

RECTIFIER

Microchip Technology
2,403 -

RFQ

1N5617E3

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 35pF @ 12V, 1MHz 150 ns 500 nA @ 400 V 400 V 1A -65°C ~ 175°C 800 mV @ 3 A
APT15DQ120BG

APT15DQ120BG

DIODE GEN PURP 1.2KV 15A TO247

Microchip Technology
3,833 -

RFQ

APT15DQ120BG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 240 ns 100 µA @ 1200 V 1200 V 15A -55°C ~ 175°C 3.3 V @ 15 A
CDLL4148

CDLL4148

DIODE GEN PURP 75V 200MA DO213AA

Microchip Technology
3,197 -

RFQ

CDLL4148

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 20 ns 500 nA @ 75 V 75 V 200mA -65°C ~ 175°C 1 V @ 200 mA
JANTX1N4500

JANTX1N4500

DIODE GEN PURP 80V DO35

Microchip Technology
1,235 -

RFQ

JANTX1N4500

Ficha técnica

Bulk Military, MIL-PRF-19500/403 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 6 ns 100 nA @ 75 V 80 V - -65°C ~ 175°C 1.1 V @ 300 mA
JANTX1N4153-1

JANTX1N4153-1

DIODE GEN PURP 50V 150MA DO204AH

Microchip Technology
824 -

RFQ

JANTX1N4153-1

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 2pF @ 0V, 1MHz 4 ns 50 nA @ 50 V 50 V 150mA -65°C ~ 175°C 880 mV @ 20 mA
JANS1N5809

JANS1N5809

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology
331 -

RFQ

JANS1N5809

Ficha técnica

Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 60pF @ 10V, 1MHz 30 ns 5 µA @ 100 V 100 V 3A -65°C ~ 175°C 875 mV @ 4 A
JANS1N6640

JANS1N6640

DIODE GEN PURP 50V 300MA DO204AH

Microchip Technology
474 -

RFQ

JANS1N6640

Ficha técnica

Bulk Military, MIL-PRF-19500/609 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 4 ns 100 nA @ 50 V 50 V 300mA -65°C ~ 175°C 1 V @ 200 mA
JANS1N3595US

JANS1N3595US

DIODE GEN PURP 200MA DO35

Microchip Technology
370 -

RFQ

JANS1N3595US

Ficha técnica

Bulk Military, MIL-S-19500-241 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 3 µs 1 nA @ 125 V - 200mA (DC) -65°C ~ 150°C 1 V @ 200 mA
JAN1N3613

JAN1N3613

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology
2,240 -

RFQ

JAN1N3613

Ficha técnica

Bulk Military, MIL-PRF-19500/228 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 300 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N647/TR

1N647/TR

SIGNAL/COMPUTER DIODE

Microchip Technology
3,798 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - - 400 V - - 1 V @ 400 mA
CDLL0.5A40

CDLL0.5A40

DIODE SCHOTTKY 40V 500MA DO213AA

Microchip Technology
2,001 -

RFQ

CDLL0.5A40

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 50pF @ 0V, 1MHz - 10 µA @ 40 V 40 V 500mA -65°C ~ 125°C 650 mV @ 500 mA
JAN1N3614

JAN1N3614

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology
3,831 -

RFQ

JAN1N3614

Ficha técnica

Bulk Military, MIL-PRF-19500/228 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 1 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
CDLL483B

CDLL483B

DIODE GEN PURP 80V 200MA DO213AA

Microchip Technology
2,353 -

RFQ

CDLL483B

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - - 100 µA @ 80 V 80 V 200mA -65°C ~ 175°C 1 V @ 100 mA
1N486B

1N486B

ZENER DIODE

Microchip Technology
3,680 -

RFQ

1N486B

Ficha técnica

Bulk RoHS - - Active - - - - - - - -
UPS115UE3/TR7

UPS115UE3/TR7

DIODE SCHOTTKY 15V 1A POWERMITE

Microchip Technology
3,931 -

RFQ

UPS115UE3/TR7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 150pF @ 5V, 1MHz - 10 mA @ 15 V 15 V 1A -55°C ~ 150°C 220 mV @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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