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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5614DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
2,906 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
1N4938UR-1DIODE GEN PURP 175V 100MA DO213 Microchip Technology |
3,759 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | - | 50 ns | 100 nA @ 175 V | 175 V | 100mA | -65°C ~ 175°C | 1 V @ 100 mA | |
|
JAN1N5615DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
3,711 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
1N5616/TRSTD RECTIFIER Microchip Technology |
2,433 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
JAN1N5616DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
2,727 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
|
JANTX1N5807DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
3,920 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A |
|
|
JAN1N5618DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
3,939 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 500 nA @ 600 V | 600 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
|
JANTX1N5809DIODE GEN PURP 100V 3A AXIAL Microchip Technology |
3,558 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A |
|
JANTX1N5711-1/TRSCHOTTKY Microchip Technology |
3,743 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/444 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 2pF @ 0V, 1MHz | - | 200 nA @ 50 V | 50 V | 33mA | -65°C ~ 150°C | 1 V @ 15 mA |
|
JANTX1N5806US/TRUFR,FRR Microchip Technology |
2,040 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 10V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 975 mV @ 2.5 A |
|
JANTX1N5417/TRRECTIFIER UFR,FRR Microchip Technology |
2,927 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/411 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 1 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A |
|
APT75DQ120BGDIODE GEN PURP 1.2KV 75A TO247 Microchip Technology |
2,429 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 325 ns | 100 µA @ 1200 V | 1200 V | 75A | -55°C ~ 175°C | 3.1 V @ 75 A | |
|
CDLL4148/TRSIGNAL/COMPUTER DIODE Microchip Technology |
2,130 | - |
RFQ |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 200mA | -65°C ~ 175°C | 1 V @ 200 mA | ||
|
JAN1N5616US/TRSTD RECTIFIER Microchip Technology |
3,906 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A | |
|
JANTX1N4249DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
2,944 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A |
|
|
CDLL0.5A40/TRDIODE SMALL-SIGNAL SCHOTTKY Microchip Technology |
2,316 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | - | 10 µA @ 40 V | 40 V | 500mA | -65°C ~ 125°C | 650 mV @ 500 mA | |
|
|
HSM5100G/TR13DIODE SCHOTTKY 100V 5A DO215AB Microchip Technology |
3,298 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 100 V | 100 V | 5A | -55°C ~ 175°C | 800 mV @ 5 A | |
|
|
1N5623USDIODE GEN PURP 1KV 1A D5A Microchip Technology |
3,819 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 12V, 1MHz | 500 ns | 500 nA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A | |
|
|
HSM580G/TR13DIODE SCHOTTKY 80V 5A DO215AB Microchip Technology |
2,444 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 80 V | 80 V | 5A | -55°C ~ 175°C | 800 mV @ 5 A | |
|
|
HSM590G/TR13DIODE SCHOTTKY 90V 5A DO215AB Microchip Technology |
3,842 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 90 V | 90 V | 5A | -55°C ~ 175°C | 800 mV @ 5 A |
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