Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
MS108/TR8

MS108/TR8

DIODE SCHOTTKY 80V 1A DO204AL

Microchip Technology
3,994 -

RFQ

MS108/TR8

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 80 V 80 V 1A -55°C ~ 175°C 810 mV @ 1 A
MS108E3/TR8

MS108E3/TR8

DIODE SCHOTTKY 80V 1A DO204AL

Microchip Technology
3,587 -

RFQ

MS108E3/TR8

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 80 V 80 V 1A -55°C ~ 175°C 810 mV @ 1 A
MS109/TR8

MS109/TR8

DIODE SCHOTTKY 90V 1A DO204AL

Microchip Technology
2,192 -

RFQ

MS109/TR8

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 90 V 90 V 1A -55°C ~ 175°C 810 mV @ 1 A
MS109E3/TR8

MS109E3/TR8

DIODE SCHOTTKY 90V 1A DO204AL

Microchip Technology
3,526 -

RFQ

MS109E3/TR8

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 90 V 90 V 1A -55°C ~ 175°C 810 mV @ 1 A
1N4608

1N4608

DIODE GEN PURP 85V 200MA DO35

Microchip Technology
3,983 -

RFQ

1N4608

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole - 10 ns 100 µA @ 50 V 85 V 200mA -65°C ~ 150°C 1.1 V @ 400 mA
MS110/TR8

MS110/TR8

DIODE SCHOTTKY 100V 1A DO204AL

Microchip Technology
3,217 -

RFQ

MS110/TR8

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 100 V 100 V 1A -55°C ~ 175°C 830 mV @ 1 A
MS110E3/TR8

MS110E3/TR8

DIODE SCHOTTKY 100V 1A DO204AL

Microchip Technology
2,075 -

RFQ

MS110E3/TR8

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 100 V 100 V 1A -55°C ~ 175°C 830 mV @ 1 A
1N3070

1N3070

DIODE GEN PURP 175V 100MA DO7

Microchip Technology
2,552 -

RFQ

1N3070

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Obsolete Through Hole - 50 ns 100 nA @ 175 V 175 V 100mA -65°C ~ 175°C 1 V @ 100 mA
1N4448

1N4448

DIODE GEN PURP 75V 200MA DO35

Microchip Technology
2,248 -

RFQ

1N4448

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Discontinued at Digi-Key Through Hole - 4 ns 25 nA @ 20 V 75 V 200mA -65°C ~ 150°C 1 V @ 100 mA
1N3612

1N3612

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology
2,434 -

RFQ

1N3612

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - - 1 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N3614

1N3614

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology
2,696 -

RFQ

1N3614

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - - 1 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N3957

1N3957

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology
2,534 -

RFQ

1N3957

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - - 1 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N4248

1N4248

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology
2,535 -

RFQ

1N4248

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - 5 µs 1 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.3 V @ 3 A
MSC010SDA070K

MSC010SDA070K

DIODE SCHOTTKY 700V 10A TO220-3

Microchip Technology
2,237 -

RFQ

MSC010SDA070K

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole - 0 ns - 700 V 10A (DC) - 1.5 V @ 10 A
5817SMG/TR13

5817SMG/TR13

DIODE SCHOTTKY 20V 1A DO215AA

Microchip Technology
3,083 -

RFQ

5817SMG/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 1 mA @ 20 V 20 V 1A -55°C ~ 150°C 450 mV @ 1 A
1N4249

1N4249

DIODE GEN PURP 1KV 1A AXIAL

Microchip Technology
2,215 -

RFQ

1N4249

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole - 5 µs 1 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 3 A
5817SMGE3/TR13

5817SMGE3/TR13

DIODE SCHOTTKY 20V 1A DO215AA

Microchip Technology
3,935 -

RFQ

5817SMGE3/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 1 mA @ 20 V 20 V 1A -55°C ~ 150°C 450 mV @ 1 A
1N4449

1N4449

DIODE GEN PURP 75V 200MA DO35

Microchip Technology
3,000 -

RFQ

1N4449

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Discontinued at Digi-Key Through Hole - 4 ns 25 nA @ 20 V 75 V 200mA -65°C ~ 150°C 1 V @ 30 mA
5818SMG/TR13

5818SMG/TR13

DIODE SCHOTTKY 30V 1A DO215AA

Microchip Technology
3,778 -

RFQ

5818SMG/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 1 mA @ 30 V 30 V 1A -55°C ~ 150°C 550 mV @ 1 A
1N4944

1N4944

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology
3,218 -

RFQ

1N4944

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 35pF @ 12V, 1MHz 150 ns 1 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.3 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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