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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT30D20BGDIODE GEN PURP 200V 30A TO247 Microchip Technology |
2,862 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 24 ns | 250 µA @ 200 V | 200 V | 30A | -55°C ~ 175°C | 1.3 V @ 30 A | |
|
1N6073DIODE GEN PURP 50V 850MA AXIAL Microchip Technology |
3,008 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 30 ns | 1 µA @ 50 V | 50 V | 850mA | -65°C ~ 155°C | 2.04 V @ 9.4 A | |
|
1N6080USDIODE GEN PURP 100V 2A G-MELF Microchip Technology |
2,432 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | 30 ns | 10 µA @ 100 V | 100 V | 2A | -65°C ~ 155°C | 1.5 V @ 37.7 A | |
|
1N645UR-1DIODE GEN PURP 225V 400MA DO213 Microchip Technology |
3,272 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | - | - | 50 nA @ 225 V | 225 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
JANTX1N5617USDIODE GEN PURP 400V 1A D5A Microchip Technology |
3,433 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 35pF @ 12V, 1MHz | 150 ns | 500 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
1N5417USDIODE GEN PURP 200V 3A D5B Microchip Technology |
3,877 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 150 ns | 1 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |
|
MSC030SDA070SGEN2 SIC SBD 700V 30A D3PAK Microchip Technology |
3,313 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | - | 0 ns | - | 700 V | 30A (DC) | -55°C ~ 175°C | 1.8 V @ 30 A | |
|
|
1N646-1DIODE GEN PURP 300V 400MA DO35 Microchip Technology |
2,145 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 50 nA @ 300 V | 300 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
1N648-1DIODE GEN PURP 500V 400MA DO35 Microchip Technology |
2,025 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | - | 50 nA @ 500 V | 500 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
1N5553USDIODE GEN PURP 800V 3A B-MELF Microchip Technology |
100 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 1 µA @ 800 V | 800 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A | |
|
1N6624USDIODE GEN PURP 990V 1A A-MELF Microchip Technology |
3,466 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 10pF @ 10V, 1MHz | 50 ns | 500 nA @ 990 V | 990 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
|
1N6629DIODE GEN PURP 880V 1.4A AXIAL Microchip Technology |
3,736 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 40pF @ 10V, 1MHz | 50 ns | 2 µA @ 880 V | 880 V | 1.4A | -65°C ~ 150°C | 1.4 V @ 1.4 A | |
|
|
1N6629USDIODE GEN PURP 880V 1.4A A-MELF Microchip Technology |
2,248 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Surface Mount | 40pF @ 10V, 1MHz | 50 ns | 2 µA @ 880 V | 880 V | 1.4A | -65°C ~ 150°C | 1.4 V @ 1.4 A | |
|
|
1N6631DIODE GEN PURP 1.1KV 1.4A AXIAL Microchip Technology |
3,698 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | 40pF @ 10V, 1MHz | 60 ns | 4 µA @ 1100 V | 1100 V | 1.4A | -65°C ~ 150°C | 1.4 V @ 1.4 A | |
|
|
1N6675DIODE SCHOTTKY 20V 200MA DO35 Microchip Technology |
2,376 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Through Hole | 50pF @ 0V, 1MHz | - | 10 µA @ 20 V | 20 V | 200mA | -65°C ~ 125°C | 500 mV @ 200 mA | |
|
JANTXV1N5614USDIODE GEN PURP 200V 1A D5A Microchip Technology |
3,145 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/427 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 500 nA @ 200 V | 200 V | 1A | -65°C ~ 200°C | 1.3 V @ 3 A |
|
|
1N6676DIODE SCHOTTKY 30V 200MA DO35 Microchip Technology |
3,675 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Through Hole | 50pF @ 0V, 1MHz | - | 10 µA @ 30 V | 30 V | 200mA | -65°C ~ 125°C | 500 mV @ 200 mA | |
|
|
DSB0.2A20DIODE SCHOTTKY 20V 200MA DO35 Microchip Technology |
3,761 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Through Hole | 50pF @ 0V, 1MHz | - | 5 µA @ 20 V | 20 V | 200mA | -65°C ~ 125°C | 500 mV @ 200 mA | |
|
|
DSB0.2A40DIODE SCHOTTKY 20V 200MA DO35 Microchip Technology |
3,706 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Through Hole | 50pF @ 0V, 1MHz | - | 5 µA @ 40 V | 20 V | 200mA | -65°C ~ 125°C | 510 mV @ 200 mA | |
|
|
DSB0.5A20DIODE SCHOTTKY 20V 500MA DO35 Microchip Technology |
2,749 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 60pF @ 0V, 1MHz | - | 10 µA @ 20 V | 20 V | 500mA | -65°C ~ 125°C | 650 mV @ 500 mA |
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