Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
DSB5818

DSB5818

DIODE SCHOTTKY 30V 1A DO204AL

Microchip Technology
3,134 -

RFQ

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 nA @ 30 V 30 V 1A - 600 mV @ 1 A
1N6080

1N6080

DIODE GEN PURP 100V 2A AXIAL

Microchip Technology
3,834 -

RFQ

1N6080

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole - 30 ns 10 µA @ 100 V 100 V 2A -65°C ~ 155°C 1.5 V @ 37.7 A
MSC050SDA070B

MSC050SDA070B

DIODE SCHOTTKY 700V 50A TO247

Microchip Technology
2,159 -

RFQ

MSC050SDA070B

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole - 0 ns - 700 V 50A (DC) - 1.5 V @ 50 A
HS18140

HS18140

DIODE SCHOTTKY 40V 180A HALFPAK

Microchip Technology
3,317 -

RFQ

HS18140

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Chassis Mount 7500pF @ 5V, 1MHz - 4 mA @ 40 V 40 V 180A - 700 mV @ 180 A
DSB5820

DSB5820

DIODE SCHOTTKY 20V 3A DO204AH

Microchip Technology
2,380 -

RFQ

DSB5820

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 20 V 20 V 3A -65°C ~ 125°C 500 mV @ 3 A
DSB5821

DSB5821

DIODE SCHOTTKY 30V 3A DO204AH

Microchip Technology
3,395 -

RFQ

DSB5821

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 30 V 30 V 3A -65°C ~ 125°C 500 mV @ 3 A
DSB5822

DSB5822

DIODE SCHOTTKY 40V 3A DO204AH

Microchip Technology
2,706 -

RFQ

DSB5822

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 40 V 40 V 3A -65°C ~ 125°C 500 mV @ 3 A
JANS1N6638

JANS1N6638

DIODE GEN PURP 125V 300MA DO204

Microchip Technology
2,100 -

RFQ

JANS1N6638

Ficha técnica

Bulk Military, MIL-PRF-19500/578 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Through Hole 2.5pF @ 0V, 1MHz 4.5 ns 500 nA @ 125 V 125 V 300mA -65°C ~ 175°C 1.1 V @ 200 mA
JANS1N5615

JANS1N5615

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology
3,601 -

RFQ

JANS1N5615

Ficha técnica

Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 12V, 1MHz 150 ns 500 nA @ 200 V 200 V 1A -65°C ~ 175°C 1.6 V @ 3 A
S3480

S3480

DIODE GEN PURP 800V 45A DO203AB

Microchip Technology
2,530 -

RFQ

S3480

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Stud Mount - - 10 µA @ 800 V 800 V 45A -65°C ~ 200°C 1.15 V @ 90 A
MSC050SDA120S

MSC050SDA120S

UNRLS, FG, GEN2, SIC SBD, TO-268

Microchip Technology
3,128 -

RFQ

MSC050SDA120S

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount - 0 ns - 1200 V 50A (DC) - -
UES1106

UES1106

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology
3,900 -

RFQ

UES1106

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 400 V 400 V 1A -55°C ~ 150°C 1.25 V @ 1 A
UES1104

UES1104

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology
3,933 -

RFQ

UES1104

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 200 V 200 V 1A -55°C ~ 150°C 1.25 V @ 1 A
JAN1N5822

JAN1N5822

DIODE SCHOTTKY 40V 3A AXIAL

Microchip Technology
3,370 -

RFQ

JAN1N5822

Ficha técnica

Bulk Military, MIL-PRF-19500/620 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 40 V 40 V 3A -65°C ~ 125°C 500 mV @ 3 A
JANTX1N5615

JANTX1N5615

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology
3,084 -

RFQ

JANTX1N5615

Ficha técnica

Bulk Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 12V, 1MHz 150 ns 500 nA @ 200 V 200 V 1A -65°C ~ 175°C 1.6 V @ 3 A
1N5806US

1N5806US

DIODE GEN PURP 150V 1A D5A

Microchip Technology
3,725 -

RFQ

1N5806US

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 25pF @ 10V, 1MHz 25 ns 1 µA @ 150 V 150 V 1A -65°C ~ 175°C 875 mV @ 1 A
JANTX1N3912

JANTX1N3912

DIODE GEN PURP 300V 50A DO203AB

Microchip Technology
2,312 -

RFQ

JANTX1N3912

Ficha técnica

Bulk Military, MIL-PRF-19500/308 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 200 ns 15 µA @ 300 V 300 V 50A -65°C ~ 150°C 1.4 V @ 50 A
JANTXV1N3912

JANTXV1N3912

DIODE GEN PURP 300V 50A DO5

Microchip Technology
2,934 -

RFQ

JANTXV1N3912

Ficha técnica

Bulk Military, MIL-PRF-19500/308 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 150 ns 15 µA @ 300 V 300 V 50A -65°C ~ 150°C 1.4 V @ 50 A
JANTXV1N4153-1

JANTXV1N4153-1

DIODE GEN PURP 50V 150MA DO35

Microchip Technology
2,740 -

RFQ

JANTXV1N4153-1

Ficha técnica

Bulk Military, MIL-PRF-19500/337 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 2pF @ 0V, 1MHz 4 ns 50 nA @ 50 V 50 V 150mA -65°C ~ 175°C 880 mV @ 20 mA
JANTX1N4153UR-1

JANTX1N4153UR-1

DIODE GEN PURP 50V 150MA DO213AA

Microchip Technology
3,001 -

RFQ

JANTX1N4153UR-1

Ficha técnica

Bulk Military, MIL-PRF-19500/337 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 4 ns - 50 V 150mA -65°C ~ 175°C 550 mV @ 100 µA
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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