+86 075582561136
Carregar BOM
Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT30SCD120SDIODE SCHOTTKY 1.2KV 99A D3PAK Microchip Technology |
2,794 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Surface Mount | 2100pF @ 0V, 1MHz | 0 ns | 600 µA @ 1200 V | 1200 V | 99A (DC) | -55°C ~ 150°C | 1.8 V @ 30 A | |
|
APT30SCD120BDIODE SCHOTTKY 1.2KV 99A Microchip Technology |
2,981 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 2100pF @ 0V, 1MHz | 0 ns | 600 µA @ 1200 V | 1200 V | 99A (DC) | -55°C ~ 150°C | 1.8 V @ 30 A | |
|
JAN1N647-1DIODE GEN PURP 400V 400MA DO35 Microchip Technology |
3,958 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 nA @ 400 V | 400 V | 400mA | -65°C ~ 175°C | 1 V @ 400 mA | |
|
APT10SCD65KDIODE SILICON 650V 17A TO220 Microchip Technology |
2,866 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 300pF @ 1V, 1MHz | 0 ns | 200 µA @ 650 V | 650 V | 17A | -55°C ~ 150°C | 1.8 V @ 10 A | |
|
|
APT20SCD65KDIODE SILICON 650V 32A TO220 Microchip Technology |
2,233 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Obsolete | Through Hole | 680pF @ 100mV, 1MHz | 0 ns | 400 µA @ 650 V | 650 V | 32A | -55°C ~ 150°C | 1.8 V @ 20 A | |
|
1N5419E3DIODE GEN PURP 500V 3A AXIAL Microchip Technology |
3,170 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 250 ns | 1 µA @ 500 V | 500 V | 3A | -65°C ~ 175°C | 1.5 V @ 9 A | |
|
1N6625E3DIODE GEN PURP 1.1KV 1A AXIAL Microchip Technology |
3,238 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 80 ns | 1 µA @ 1000 V | 1100 V | 1A | -65°C ~ 150°C | 1.95 V @ 1.5 A | ||
|
UES2602DIODE GEN PURP 100V 30A TO204AA Microchip Technology |
3,394 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Through Hole | - | 35 ns | 20 µA @ 100 V | 100 V | 30A | -55°C ~ 175°C | 930 mV @ 15 A | |
|
UES706HR2DIODE GEN PURP 400V 20A DO4 Microchip Technology |
3,805 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Chassis, Stud Mount | - | 50 ns | 50 µA @ 400 V | 400 V | 20A (DC) | -55°C ~ 150°C | 1.25 V @ 20 A | |
|
UFT3140CDIODE GEN PURP 400V 30A TO204AA Microchip Technology |
2,770 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Chassis Mount | - | 50 ns | 15 mA @ 400 V | 400 V | 30A (DC) | -65°C ~ 175°C | 1.1 V @ 15 A | ||
|
|
JAN1N457DIODE GEN PURP 70V 150MA DO35 Microchip Technology |
3,367 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/193 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 70 V | 70 V | 150mA | -65°C ~ 150°C | 1 V @ 100 mA |
|
5819SMJE3/TR13DIODE SCHOTTKY 40V 1A DO214AA Microchip Technology |
3,767 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 40 V | 40 V | 1A | -55°C ~ 150°C | 550 mV @ 1 A | |
|
|
JAN1N458DIODE GEN PURP 70V 150MA DO35 Microchip Technology |
3,044 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/193 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 70 V | 70 V | 150mA | -65°C ~ 150°C | 1 V @ 100 mA |
|
JANTX1N1184DIODE GEN PURP 100V 35A DO5 Microchip Technology |
2,432 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/297 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 100 V | 35A | -65°C ~ 175°C | 1.4 V @ 110 A |
|
JANTX1N1614DIODE GEN PURP 200V 15A DO203AA Microchip Technology |
3,257 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/162 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Discontinued at Digi-Key | Stud Mount | - | - | 50 µA @ 200 V | 200 V | 15A | -65°C ~ 175°C | 1.5 V @ 15 A |
|
JANTX1N3164DIODE GEN PURP 200V 300A DO205AB Microchip Technology |
3,281 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/211 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 mA @ 200 V | 200 V | 300A | -65°C ~ 200°C | 1.55 V @ 940 A |
|
JANTX1N3289DIODE GEN PURP 200V 100A DO205AA Microchip Technology |
3,502 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/246 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Stud Mount | - | - | 10 mA @ 200 V | 200 V | 100A | -65°C ~ 200°C | 1.55 V @ 310 A |
|
|
JANTX1N485BDIODE GEN PURP 180V 200MA DO35 Microchip Technology |
2,311 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/118 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 180 V | 180 V | 200mA (DC) | -65°C ~ 175°C | 1 V @ 100 mA |
|
|
JANTX1N486BDIODE GEN PURP 225V 200MA DO35 Microchip Technology |
2,757 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/118 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 25 nA @ 225 V | 225 V | 200mA (DC) | -65°C ~ 175°C | 1 V @ 100 mA |
|
JANTX1N5194DIODE GEN PURP 70V 50MA DO35 Microchip Technology |
2,937 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/118 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | - | 25 nA @ 70 V | 70 V | 50mA (DC) | -65°C ~ 175°C | 1 V @ 100 mA |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
