Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
JANTX1N5290-1

JANTX1N5290-1

DIODE REG 500MW DO-7

Microchip Technology
3,376 -

RFQ

JANTX1N5290-1

Ficha técnica

Bulk Military, MIL-PRF-19500/463 RoHS - - Discontinued at Digi-Key Through Hole - - - - - - -
JANTX1N5291UR-1

JANTX1N5291UR-1

DIODE REG 500MW DO-213AB

Microchip Technology
2,474 -

RFQ

JANTX1N5291UR-1

Ficha técnica

Bulk Military, MIL-PRF-19500/463 RoHS - - Discontinued at Digi-Key Surface Mount - - - - - - -
JANTX1N5302-1

JANTX1N5302-1

DIODE REG 500MW DO-7

Microchip Technology
3,436 -

RFQ

JANTX1N5302-1

Ficha técnica

Bulk Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
JANTX1N5311-1

JANTX1N5311-1

DIODE REG 500MW DO-7

Microchip Technology
3,259 -

RFQ

JANTX1N5311-1

Ficha técnica

Bulk Military, MIL-PRF-19500/463 RoHS - - Active Through Hole - - - - - - -
JANTX1N6761-1

JANTX1N6761-1

DIODE SCHOTTKY 100V 1A DO41

Microchip Technology
3,303 -

RFQ

JANTX1N6761-1

Ficha técnica

Bulk Military, MIL-PRF-19500/586 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 70pF @ 5V, 1MHz - 100 µA @ 100 V 100 V 1A -65°C ~ 150°C 690 mV @ 1 A
JANTX1N6857-1

JANTX1N6857-1

DIODE SCHOTTKY 20V 150MA DO35

Microchip Technology
2,094 -

RFQ

JANTX1N6857-1

Ficha técnica

Bulk Military, MIL-PRF-19500/444 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Through Hole - - 150 nA @ 16 V 20 V 150mA -65°C ~ 150°C 350 mV @ 1 mA
JANTXV1N645-1

JANTXV1N645-1

DIODE GEN PURP 225V 400MA DO35

Microchip Technology
3,631 -

RFQ

JANTXV1N645-1

Ficha técnica

Bulk Military, MIL-PRF-19500/240 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - - 50 nA @ 225 V 225 V 400mA (DC) -65°C ~ 175°C 1 V @ 400 mA
JANTXV1N6492

JANTXV1N6492

DIODE SCHOTTKY 45V 3.6A TO205AF

Microchip Technology
3,308 -

RFQ

JANTXV1N6492

Ficha técnica

Bulk Military, MIL-PRF-19500/567 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 450pF @ 5V, 1MHz - 2 mA @ 45 V 45 V 3.6A -65°C ~ 175°C 560 mV @ 2 A
JANTXV1N6677UR-1

JANTXV1N6677UR-1

DIODE SCHOTTKY 40V 200MA DO213AA

Microchip Technology
3,304 -

RFQ

JANTXV1N6677UR-1

Ficha técnica

Bulk Military, MIL-PRF-19500/610 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 50pF @ 0V, 1MHz - 5 µA @ 40 V 40 V 200mA -65°C ~ 125°C 500 mV @ 200 mA
JANTXV1N6843CCU3

JANTXV1N6843CCU3

DIODE SCHOTTKY 100V 15A U3

Microchip Technology
2,189 -

RFQ

JANTXV1N6843CCU3

Ficha técnica

Bulk Military, MIL-PRF-19500/681 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount 275pF @ 5V, 1MHz - 10 µA @ 100 V 100 V 15A -65°C ~ 150°C 1.27 V @ 30 A
JANTXV1N6858UR-1

JANTXV1N6858UR-1

DIODE SCHOTTKY 70V 75MA DO213AA

Microchip Technology
2,850 -

RFQ

JANTXV1N6858UR-1

Ficha técnica

Bulk Military, MIL-PRF-19500/444 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 4.5pF @ 0V, 1MHz - 200 nA @ 50 V 70 V 75mA -65°C ~ 150°C 650 mV @ 15 mA
APT30DQ60KG

APT30DQ60KG

DIODE GEN PURP 600V 30A TO220

Microchip Technology
2,723 -

RFQ

APT30DQ60KG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 25 µA @ 600 V 600 V 30A -55°C ~ 175°C 2.4 V @ 30 A
MC5616

MC5616

DIODE GEN PURP 3KV 570MA S AXIAL

Microchip Technology
3,769 -

RFQ

MC5616

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 300 ns 1 µA @ 3000 V 3000 V 570mA -65°C ~ 150°C 6 V @ 100 mA
APT15DQ120KG

APT15DQ120KG

DIODE GEN PURP 1.2KV 15A TO220

Microchip Technology
2,493 -

RFQ

APT15DQ120KG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 240 ns 100 µA @ 1200 V 1200 V 15A -55°C ~ 175°C 3.3 V @ 15 A
APT30D30BG

APT30D30BG

DIODE GEN PURP 300V 30A TO247

Microchip Technology
3,133 -

RFQ

APT30D30BG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 250 µA @ 300 V 300 V 30A -55°C ~ 175°C 1.4 V @ 30 A
APT30D100BG

APT30D100BG

DIODE GEN PURP 1KV 30A TO247

Microchip Technology
3,928 -

RFQ

APT30D100BG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 290 ns 250 µA @ 1000 V 1000 V 30A -55°C ~ 175°C 2.3 V @ 30 A
APT60D120BG

APT60D120BG

DIODE GEN PURP 1.2KV 60A TO247

Microchip Technology
2,723 -

RFQ

APT60D120BG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 250 µA @ 1200 V 1200 V 60A -55°C ~ 175°C 2.5 V @ 60 A
APT15DQ60BG

APT15DQ60BG

DIODE GEN PURP 600V 15A TO247

Microchip Technology
3,334 -

RFQ

APT15DQ60BG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 19 ns 25 µA @ 600 V 600 V 15A -55°C ~ 175°C 2.4 V @ 15 A
46147

46147

TRANSISTOR

Microchip Technology
2,141 -

RFQ

Bulk RoHS - - Obsolete - - - - - - - -
64075

64075

TRANSISTOR

Microchip Technology
3,175 -

RFQ

Bulk RoHS - - Obsolete - - - - - - - -
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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