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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
JANTXV1N6640US/TR SIGNAL/COMPUTER DIODE Microchip Technology	3,349	-	RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/609	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	4 ns	90 µA @ 50 V	50 V	300mA	-65°C ~ 175°C	1 V @ 200 mA
VS-50WQ04FNTRHM3 DIODE SCHOTTKY 40V 5.5A DPAK Vishay General Semiconductor - Diodes Division	2,465	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	405pF @ 5V, 1MHz	-	3 mA @ 40 V	40 V	5.5A	-40°C ~ 150°C	510 mV @ 5 A
JAN1N6631 DIODE GEN PURP 1.1KV 1.4A AXIAL Microchip Technology	2,277	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/590	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	2 µA @ 1000 V	1100 V	1.4A	-65°C ~ 175°C	1.6 V @ 1 A
VS-HFA04SD60SR-M3 DIODE GEN PURP 600V 4A TO252 Vishay General Semiconductor - Diodes Division	3,991	-	RFQ	Ficha técnica	Tape & Reel (TR)	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	42 ns	3 µA @ 600 V	600 V	4A	-65°C ~ 175°C	1.8 V @ 4 A
FR20BR02 DIODE GEN PURP REV 100V 20A DO5 GeneSiC Semiconductor	3,123	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 50 V	100 V	20A	-40°C ~ 125°C	1 V @ 20 A
1N5418E3/TR RECTIFIER UFR,FRR Microchip Technology	3,642	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	150 ns	1 µA @ 400 V	400 V	3A	-65°C ~ 175°C	1.5 V @ 9 A
JANTXV1N5553 DIODE GEN PURP 800V 5A AXIAL Microchip Technology	2,840	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/420	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	1 µA @ 800 V	800 V	5A	-65°C ~ 175°C	1.3 V @ 9 A
MBR1050 DIODE SCHOTTKY 50V 10A TO220AC onsemi	3,277	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	100 µA @ 50 V	50 V	10A	-65°C ~ 150°C	800 mV @ 10 A
JANTXV1N5616 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	3,862	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/427	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	500 nA @ 400 V	400 V	1A	-65°C ~ 200°C	1.3 V @ 3 A
VS-HFA04SD60STR-M3 DIODE GEN PURP 600V 4A D-PAK Vishay General Semiconductor - Diodes Division	3,479	-	RFQ	Ficha técnica	Tape & Reel (TR)	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	42 ns	3 µA @ 600 V	600 V	4A	-55°C ~ 150°C	1.8 V @ 4 A
FR20DR02 DIODE GEN PURP REV 200V 20A DO5 GeneSiC Semiconductor	3,810	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 50 V	200 V	20A	-40°C ~ 125°C	1 V @ 20 A
JAN1N5420/TR RECTIFIER UFR,FRR Microchip Technology	2,613	-	RFQ	Ficha técnica	Tape & Reel (TR)	Military, MIL-PRF-19500/411	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	400 ns	1 µA @ 600 V	600 V	3A	-65°C ~ 175°C	1.5 V @ 9 A
GKN71/16 DIODE GEN PURP 1.6KV 95A DO5 GeneSiC Semiconductor	3,636	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 mA @ 1600 V	1600 V	95A	-40°C ~ 180°C	1.5 V @ 60 A
RURP1560-F085P UFR TO220 15A 600V AUTO onsemi	2,338	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	70 ns	100 µA @ 600 V	600 V	15A	-55°C ~ 175°C	1.5 V @ 15 A
JAN1N6630 DIODE GEN PURP 900V 1.4A AXIAL Microchip Technology	2,784	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/590	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	2 µA @ 900 V	900 V	1.4A	-65°C ~ 150°C	1.4 V @ 1.4 A
NRTS30100MFST3G 100V30A TRENCH SCHOTTKY onsemi	2,906	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	2540pF @ 1V, 1MHz	-	100 µA @ 100 V	100 V	30A (DC)	-55°C ~ 175°C	760 mV @ 30 A
FR20JR02 DIODE GEN PURP REV 600V 20A DO5 GeneSiC Semiconductor	2,176	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	250 ns	25 µA @ 50 V	600 V	20A	-40°C ~ 125°C	1 V @ 20 A
VS-1N1184A DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,603	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	2.5 mA @ 100 V	100 V	40A	-65°C ~ 200°C	1.3 V @ 126 A
JANTXV1N5623US DIODE GEN PURP 1KV 1A D5A Microchip Technology	2,164	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/429	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	15pF @ 12V, 1MHz	500 ns	500 nA @ 1000 V	1000 V	1A	-65°C ~ 175°C	1.6 V @ 3 A
DSS10-01AS-TRL DIODE SCHOTTKY 100V 10A TO263AB IXYS	2,292	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	300 µA @ 100 V	100 V	10A	-55°C ~ 175°C	840 mV @ 10 A