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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N5806D MET 2.5A SFST 150V HRV 2FFTV Semtech Corporation |
2,800 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/477 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 5V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 3.3A | -65°C ~ 175°C | 875 mV @ 1 A |
|
SD101CWS-E3-08DIODE SCHOTTKY 150MW 40V SOD323 Vishay General Semiconductor - Diodes Division |
3,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2.2pF @ 0V, 1MHz | 1 ns | 200 nA @ 30 V | 40 V | 30mA | -55°C ~ 125°C | 900 mV @ 15 mA | |
|
|
HSM120GE3/TR13DIODE SCHOTTKY 1A 20V SMBG Microchip Technology |
2,996 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
UF2A_R1_00001SURFACE MOUNT ULTRA FAST RECTIFI Panjit International Inc. |
2,394 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 28pF @ 4V, 1MHz | 50 ns | 1 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 1 V @ 2 A | ||
|
|
HSM1100JE3/TR13DIODE SCHOTTKY 100V 1A DO214BA Microchip Technology |
2,581 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 840 mV @ 1 A | |
|
SD103BW-E3-08DIODE SCHOTTKY 350MA 30V SOD123 Vishay General Semiconductor - Diodes Division |
3,802 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 20 V | 30 V | 350mA | -55°C ~ 125°C | 600 mV @ 200 mA | |
|
1N6621USDIODE GEN PURP 440V 1.2A A-MELF Microchip Technology |
3,918 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 440 V | 440 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
JANTXV1N4248/TRRECTIFIER UFR,FRR Microchip Technology |
3,844 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
|
S210L-AU_R2_000A1SCHOTTKY BARRIER RECTIFIER Panjit International Inc. |
3,827 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 120pF @ 4V, 1MHz | - | 150 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 740 mV @ 2 A | |
|
|
JAN1N6624USDIODE GEN PURP 990V 1A D5A Microchip Technology |
3,467 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 10V, 1MHz | 50 ns | 500 nA @ 990 V | 990 V | 1A | -65°C ~ 150°C | 1.55 V @ 1 A | |
|
1N5822DIODE SCHOTTKY 40V 3A AXIAL Microchip Technology |
3,805 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/620 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 40 V | 40 V | 3A | -65°C ~ 125°C | 500 mV @ 3 A |
|
|
HSM130GE3/TR13DIODE SCHOTTKY 1A 30V SMBG Microchip Technology |
2,622 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
1N4531DIODE GEN PURP 75V 125MA DO34 Microchip Technology |
3,697 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 20 ns | 500 nA @ 75 V | 75 V | 125mA | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
VS-70HFL20S02DIODE GEN PURP 200V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,620 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 200 V | 200 V | 70A | -40°C ~ 125°C | 1.85 V @ 219.8 A | |
|
|
VS-71HF20DIODE GEN PURP 200V 70A DO203AB Vishay General Semiconductor - Diodes Division |
2,008 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 15 mA @ 200 V | 200 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
|
JAN1N6625UDIODE GEN PURP 1KV 1A A-MELF Microchip Technology |
2,178 | - |
RFQ |
Bulk | Military, MIL-PRF-19500/585 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 1 µA @ 1000 V | 1000 V | 1A | -65°C ~ 150°C | 1.75 V @ 1 A | |
|
|
VS-85HFLR60S02DIODE GEN PURP 600V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,867 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 600 V | 600 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
|
|
HSM140GE3/TR13DIODE SCHOTTKY 1A 40V SMBG Microchip Technology |
3,802 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
NRVA4007T3GDIODE GEN PURP 1000V 1A SMA onsemi |
3,730 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT),Bulk | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
1N4532DIODE GEN PURP 50V 125MA DO34 Microchip Technology |
2,410 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 30 ns | 100 nA @ 50 V | 50 V | 125mA | -55°C ~ 175°C | 1 V @ 10 mA |
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