Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
JAN1N6626U

JAN1N6626U

DIODE GEN PURP 200V 1.75A E-MELF

Microchip Technology
3,030 -

RFQ

Bulk Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 2 µA @ 200 V 200 V 1.75A -65°C ~ 150°C 1.35 V @ 2 A
NVDSH20120C

NVDSH20120C

SIC DIODE GEN2.0 1200V TO247-2L

onsemi
2,642 -

RFQ

NVDSH20120C

Ficha técnica

Tray Automotive, AEC-Q101 RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1480pF @ 1V, 100kHz 0 ns 200 µA @ 1200 V 1200 V 26A (DC) -55°C ~ 175°C 1.75 V @ 20 A
HSM160GE3/TR13

HSM160GE3/TR13

DIODE SCHOTTKY 60V 1A DO215AA

Microchip Technology
2,119 -

RFQ

HSM160GE3/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 60 V 60 V 1A -55°C ~ 175°C 690 mV @ 1 A
CDLL914/TR

CDLL914/TR

SIGNAL/COMPUTER DIODE

Microchip Technology
2,670 -

RFQ

CDLL914/TR

Ficha técnica

Tape & Reel (TR) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 4pF @ 0V, 1MHz 20 ns 500 nA @ 75 V 75 V 200mA -65°C ~ 175°C 1.2 V @ 50 mA
FR20MR05

FR20MR05

DIODE GEN PURP REV 1KV 20A DO5

GeneSiC Semiconductor
2,993 -

RFQ

FR20MR05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 25 µA @ 800 V 1000 V 20A -40°C ~ 125°C 1 V @ 20 A
VS-87HFR120

VS-87HFR120

DIODE GEN PURP 1.2KV 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,955 -

RFQ

VS-87HFR120

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 1200 V 85A -55°C ~ 150°C 1.2 V @ 267 A
JAN1N6627U

JAN1N6627U

DIODE GEN PURP 400V 1.75A E-MELF

Microchip Technology
3,796 -

RFQ

Bulk Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 30 ns 2 µA @ 400 V 400 V 1.75A -65°C ~ 150°C 1.35 V @ 2 A
JANTXV1N3595US/TR

JANTXV1N3595US/TR

SIGNAL/COMPUTER DIODE

Microchip Technology
2,113 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 3 µs - 125 V 4A -65°C ~ 150°C 1 V @ 200 mA
HSM170GE3/TR13

HSM170GE3/TR13

DIODE SCHOTTKY 1A 70V SMBG

Microchip Technology
3,178 -

RFQ

Tape & Reel (TR) RoHS - - Active - - - - - - - -
VS-45EPS16L-M3

VS-45EPS16L-M3

RECTIFIER DIODE 45A 1600V TO-247

Vishay General Semiconductor - Diodes Division
3,552 -

RFQ

VS-45EPS16L-M3

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 1600 V 1600 V 45A -40°C ~ 150°C 1.16 V @ 45 A
JANTX1N6620/TR

JANTX1N6620/TR

RECTIFIER UFR,FRR

Microchip Technology
2,227 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 10V, 1MHz 30 ns 500 nA @ 220 V 220 V 2A -65°C ~ 150°C 1.4 V @ 1.2 A
VS-87HFR10

VS-87HFR10

DIODE GEN PURP 100V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,480 -

RFQ

VS-87HFR10

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 100 V 85A -65°C ~ 180°C 1.2 V @ 267 A
1N6539

1N6539

DIODE RECT ULT FAST REC A-PKG

Microchip Technology
3,716 -

RFQ

Bulk RoHS - - Active - - - - - - - -
1N6548

1N6548

DIODE RECT ULT FAST REC A-PKG

Microchip Technology
3,141 -

RFQ

Bulk RoHS - - Active - - - - - - - -
HSM180GE3/TR13

HSM180GE3/TR13

DIODE SCHOTTKY 80V 1A DO215AA

Microchip Technology
2,555 -

RFQ

HSM180GE3/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 80 V 80 V 1A -55°C ~ 175°C 840 mV @ 1 A
UPS315/TR13

UPS315/TR13

DIODE SCHOTTKY 15V 3A POWERMITE

Microchip Technology
3,354 -

RFQ

UPS315/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 2 mA @ 15 V 15 V 3A -55°C ~ 125°C 320 mV @ 3 A
JANTXV1N5615/TR

JANTXV1N5615/TR

RECTIFIER UFR,FRR

Microchip Technology
3,104 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/429 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 45pF @ 12V, 1MHz 150 ns 500 nA @ 200 V 200 V 1A -65°C ~ 175°C 1.6 V @ 3 A
VS-40HFLR40S05

VS-40HFLR40S05

DIODE GEN PURP 400V 40A DO203AB

Vishay General Semiconductor - Diodes Division
3,460 -

RFQ

VS-40HFLR40S05

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 500 ns 100 µA @ 400 V 400 V 40A -40°C ~ 125°C 1.95 V @ 40 A
JANTXV1N5552US

JANTXV1N5552US

DIODE GEN PURP 600V 3A B-MELF

Microchip Technology
3,987 -

RFQ

JANTXV1N5552US

Ficha técnica

Bulk Military, MIL-PRF-19500/420 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 1 µA @ 600 V 600 V 3A -65°C ~ 175°C 1.2 V @ 9 A
1N6625US

1N6625US

DIODE GEN PURP 1.1KV 1A A-MELF

Microchip Technology
3,555 -

RFQ

1N6625US

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 10V, 1MHz 60 ns 1 µA @ 1100 V 1100 V 1A -65°C ~ 150°C 1.75 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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