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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS210-E3/52TDIODE SCHOTTKY 100V 1.5A DO214AA Vishay General Semiconductor - Diodes Division |
2,712 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 30 µA @ 100 V | 100 V | 1.5A | -55°C ~ 150°C | 750 mV @ 1 A | |
|
HVM5DIODE GEN PURP 5000V 350MA HVM Rectron USA |
2,340 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 5000 V | 5000 V | 350mA | -20°C ~ 150°C | 8 V @ 350 mA | |
|
1N5061TRDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,702 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 600 V | 600 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A | |
|
|
HVM8DIODE GEN PURP 8000V 350MA HVM Rectron USA |
2,491 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 8000 V | 8000 V | 350mA | -20°C ~ 150°C | 14 V @ 350 mA | |
|
|
1N5062TRDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,347 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A | |
|
RURDG30100ULTRAFAST DIODE Rochester Electronics, LLC |
2,265 | - |
RFQ |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
B3L30LP-7DIODE SCHOTTKY 30V 3A 8DFN Diodes Incorporated |
2,281 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 30 V | 30 V | 3A | -65°C ~ 150°C | 450 mV @ 3 A | |
|
|
HVM14DIODE GEN PURP 14000V 350MA HVM Rectron USA |
2,613 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 14000 V | 14000 V | 350mA | -20°C ~ 150°C | 14 V @ 350 mA | |
|
CD1408-FF11500DIODE GEN PURP 1.5KV 1A 1408 Bourns Inc. |
2,220 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 5 µA @ 1500 V | 1500 V | 1A | -65°C ~ 175°C | 6 V @ 1 A | |
|
|
HVM10DIODE GEN PURP 10000V 350MA HVM Rectron USA |
3,262 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 10000 V | 10000 V | 350mA | -20°C ~ 150°C | 14 V @ 350 mA | |
|
|
VSSB7L45-M3/52TDIODE SCHOTTKY 45V 3.8A DO214AA Vishay General Semiconductor - Diodes Division |
3,592 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1068pF @ 4V, 1MHz | - | 1.6 mA @ 45 V | 45 V | 3.8A | -40°C ~ 150°C | 430 mV @ 3.5 A |
|
|
HVM12DIODE GEN PURP 12000V 350MA HVM Rectron USA |
3,649 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 12000 V | 12000 V | 350mA | -20°C ~ 150°C | 14 V @ 350 mA | |
|
SS5P6HM3_A/IDIODE SCHOTTKY 60V 5A TO277A Vishay General Semiconductor - Diodes Division |
2,459 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 150 µA @ 60 V | 60 V | 5A | -55°C ~ 150°C | 690 mV @ 5 A |
|
|
WNSC2D10650DJSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
3,349 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 310pF @ 1V, 1MHz | 0 ns | 50 µA @ 650 V | 650 V | 10A | 175°C | 1.7 V @ 10 A | |
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SK64L-TP6ASCHOTTKYRECTIFIERSMC Micro Commercial Co |
2,359 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 1 mA @ 40 V | 40 V | 6A | -55°C ~ 150°C | 650 mV @ 6 A | |
|
|
SB30100LFYT_T0_00001LOW VF SCHOTTKY BARRIER RECTIFIE Panjit International Inc. |
3,368 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 100 V | 100 V | 30A | -55°C ~ 150°C | 1 V @ 30 A | ||
|
1N5059GP-E3/54DIODE GEN PURP 200V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,186 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
GKR71/16DIODE GEN PURP 1.6KV 95A DO5 GeneSiC Semiconductor |
2,594 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 mA @ 1600 V | 1600 V | 95A | -40°C ~ 180°C | 1.5 V @ 60 A | |
|
|
1N6627UZENER DIODE Microchip Technology |
3,978 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 2 µA @ 400 V | 400 V | 4A | - | 1.5 V @ 4 A | ||
|
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UFS510GE3/TR13DIODE GEN PURP 100V 5A DO215AB Microchip Technology |
2,111 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 30 ns | 10 µA @ 100 V | 100 V | 5A | -55°C ~ 175°C | 950 mV @ 5 A |
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