Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-87HFR20

VS-87HFR20

DIODE GEN PURP 200V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,916 -

RFQ

VS-87HFR20

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 200 V 85A -65°C ~ 180°C 1.2 V @ 267 A
1N3613

1N3613

DIODE GEN PURP 600V 1A AXIAL

Semtech Corporation
2,328 -

RFQ

1N3613

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
1N647-1E3

1N647-1E3

SIGNAL/COMPUTER DIODE

Microchip Technology
2,893 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 200 nA @ 400 V 400 V 400mA -65°C ~ 175°C 1 V @ 400 mA
GKR71/04

GKR71/04

DIODE GEN PURP 400V 95A DO5

GeneSiC Semiconductor
3,482 -

RFQ

GKR71/04

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 mA @ 400 V 400 V 95A -40°C ~ 180°C 1.5 V @ 60 A
HSM825G/TR13

HSM825G/TR13

DIODE SCHOTTKY 25V 8A DO215AB

Microchip Technology
2,730 -

RFQ

HSM825G/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 25 V 25 V 8A -55°C ~ 175°C 620 mV @ 8 A
MUR2510R

MUR2510R

DIODE GEN PURP REV 100V 25A DO4

GeneSiC Semiconductor
3,203 -

RFQ

MUR2510R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 75 ns 10 µA @ 50 V 100 V 25A -55°C ~ 150°C 1 V @ 25 A
FFSH3065ADN-F155

FFSH3065ADN-F155

650V 30A SIC SBD

onsemi
3,827 -

RFQ

FFSH3065ADN-F155

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 887pF @ 1V, 100kHz 0 ns 200 µA @ 650 V 650 V 23A (DC) -55°C ~ 175°C -
1N3614

1N3614

DIODE GEN PURP 800V 1A AXIAL

Semtech Corporation
3,526 -

RFQ

1N3614

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
APT15D100KG

APT15D100KG

DIODE GEN PURP 1KV 15A TO220

Microchip Technology
2,150 -

RFQ

APT15D100KG

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 260 ns 250 µA @ 1000 V 1000 V 15A -55°C ~ 175°C 2.3 V @ 15 A
GKR71/08

GKR71/08

DIODE GEN PURP 800V 95A DO5

GeneSiC Semiconductor
2,169 -

RFQ

GKR71/08

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 mA @ 800 V 800 V 95A -40°C ~ 180°C 1.5 V @ 60 A
HSM830G/TR13

HSM830G/TR13

DIODE SCHOTTKY 30V 8A DO215AB

Microchip Technology
2,395 -

RFQ

HSM830G/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 30 V 30 V 8A -55°C ~ 175°C 620 mV @ 8 A
MUR2505

MUR2505

DIODE GEN PURP 50V 25A DO4

GeneSiC Semiconductor
3,471 -

RFQ

MUR2505

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 75 ns 10 µA @ 50 V 50 V 25A -55°C ~ 150°C 1 V @ 25 A
JANTXV1N6642US

JANTXV1N6642US

DIODE GEN PURP 100V 300MA D5B

Microchip Technology
2,167 -

RFQ

JANTXV1N6642US

Ficha técnica

Bulk Military, MIL-PRF-19500/578 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 20 ns 500 nA @ 100 V 100 V 300mA -65°C ~ 175°C 1.2 V @ 100 mA
1N3957

1N3957

DIODE GEN PURP 1KV 1A AXIAL

Semtech Corporation
2,423 -

RFQ

1N3957

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 500 nA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.1 V @ 1 A
VS-20ETF06STRL-M3

VS-20ETF06STRL-M3

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division
3,615 -

RFQ

VS-20ETF06STRL-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 160 ns 100 µA @ 600 V 600 V 20A -40°C ~ 150°C 1.3 V @ 20 A
GKR71/14

GKR71/14

DIODE GEN PURP 1.4KV 95A DO5

GeneSiC Semiconductor
2,804 -

RFQ

GKR71/14

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - 10 mA @ 1400 V 1400 V 95A -40°C ~ 180°C 1.5 V @ 60 A
HSM835G/TR13

HSM835G/TR13

DIODE SCHOTTKY 35V 8A DO215AB

Microchip Technology
3,176 -

RFQ

HSM835G/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 35 V 35 V 8A -55°C ~ 175°C 620 mV @ 8 A
SB350-E3/54

SB350-E3/54

DIODE SCHOTTKY 50V 3A DO201AD

Vishay General Semiconductor - Diodes Division
2,674 -

RFQ

SB350-E3/54

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 50 V 50 V 3A -65°C ~ 150°C 680 mV @ 3 A
DPG10I300PA

DPG10I300PA

DIODE GEN PURP 300V 10A TO220AC

IXYS
3,391 -

RFQ

DPG10I300PA

Ficha técnica

Tube HiPerFRED™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 1 µA @ 300 V 300 V 10A -55°C ~ 175°C 1.27 V @ 10 A
STTH3L06UFY

STTH3L06UFY

DIODE GEN PURP 600V 3A SMBFLAT

STMicroelectronics
3,605 -

RFQ

STTH3L06UFY

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, ECOPACK®2 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 70 ns 3 µA @ 600 V 600 V 3A -40°C ~ 175°C 1.4 V @ 3 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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