Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
HSM845G/TR13

HSM845G/TR13

DIODE SCHOTTKY 45V 8A DO215AB

Microchip Technology
3,116 -

RFQ

HSM845G/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 45 V 45 V 8A -55°C ~ 175°C 620 mV @ 8 A
MUR2520R

MUR2520R

DIODE GEN PURP REV 200V 25A DO4

GeneSiC Semiconductor
3,503 -

RFQ

MUR2520R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 75 ns 10 µA @ 50 V 200 V 25A -55°C ~ 150°C 1 V @ 25 A
1N3595US/TR

1N3595US/TR

SIGNAL/COMPUTER DIODE

Microchip Technology
2,165 -

RFQ

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 3 µs 1 nA @ 125 V - 4A (DC) -65°C ~ 150°C 1 V @ 200 mA
1N6074/TR

1N6074/TR

RECTIFIER UFR,FRR

Microchip Technology
2,318 -

RFQ

1N6074/TR

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 1 µA @ 100 V 100 V 850mA -65°C ~ 155°C 2.04 V @ 9.4 A
VS-EPX3007L-N3

VS-EPX3007L-N3

RECTIFIER HYPERFAST 30A TO-247AD

Vishay General Semiconductor - Diodes Division
3,094 -

RFQ

VS-EPX3007L-N3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 30 µA @ 650 V 650 V 30A -55°C ~ 175°C 2.5 V @ 30 A
HSM845J/TR13

HSM845J/TR13

DIODE SCHOTTKY 45V 8A DO214AB

Microchip Technology
2,517 -

RFQ

HSM845J/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 45 V 45 V 8A -55°C ~ 175°C 620 mV @ 8 A
MUR2540

MUR2540

DIODE GEN PURP 400V 25A DO4

GeneSiC Semiconductor
3,301 -

RFQ

MUR2540

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 75 ns 10 µA @ 50 V 400 V 25A -55°C ~ 150°C 1.3 V @ 25 A
VS-88HF20

VS-88HF20

DIODE GEN PURP 200V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,956 -

RFQ

VS-88HF20

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 200 V 85A -65°C ~ 180°C 1.2 V @ 267 A
JANTXV1N3595AUS

JANTXV1N3595AUS

DIODE GEN PURP 125V 150MA

Microchip Technology
2,877 -

RFQ

Bulk Military, MIL-PRF-19500/241 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - 3 µs 2 nA @ 125 V 125 V 150mA -65°C ~ 175°C 920 mV @ 100 mA
GLHUELSE1626XPSA1

GLHUELSE1626XPSA1

DUMMY 57

Infineon Technologies
3,517 -

RFQ

Tray RoHS - - Active - - - - - - - -
NRVB120ESFT1G

NRVB120ESFT1G

DIODE SCHOTTKY 20V 1A SOD123

onsemi
145,481 -

RFQ

NRVB120ESFT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 10 µA @ 20 V 20 V 1A -65°C ~ 150°C 530 mV @ 1 A
MUR2540R

MUR2540R

DIODE GEN PURP REV 400V 25A DO4

GeneSiC Semiconductor
2,952 -

RFQ

MUR2540R

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - 75 ns 10 µA @ 50 V 400 V 25A -55°C ~ 150°C 1.3 V @ 25 A
VS-88HFR20

VS-88HFR20

DIODE GEN PURP 200V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,209 -

RFQ

VS-88HFR20

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard, Reverse Polarity Active Chassis, Stud Mount - - - 200 V 85A -65°C ~ 180°C 1.2 V @ 267 A
JAN1N6621US/TR

JAN1N6621US/TR

RECTIFIER UFR,FRR

Microchip Technology
2,191 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/116 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 2.8pF @ 1.5V, 1MHz 20 ns 500 nA @ 75 V 75 V 200mA -65°C ~ 200°C 1.2 V @ 100 mA
GLHUELSE1627XPSA1

GLHUELSE1627XPSA1

DUMMY 57

Infineon Technologies
2,328 -

RFQ

Tray RoHS - - Active - - - - - - - -
3SM8

3SM8

DIODE GEN PURP 800V 5A AXIAL

Semtech Corporation
3,067 -

RFQ

3SM8

Ficha técnica

Bulk Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 92pF @ 5V, 1MHz 2 µs 1 µA @ 800 V 800 V 5A - 1 V @ 3 A
VS-APU3006HN3

VS-APU3006HN3

DIODE GEN PURP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division
2,352 -

RFQ

VS-APU3006HN3

Ficha técnica

Tube Automotive, AEC-Q101, FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 30 µA @ 600 V 600 V 30A -40°C ~ 150°C 2 V @ 30 A
MUR2560

MUR2560

DIODE GEN PURP 600V 25A DO4

GeneSiC Semiconductor
2,556 -

RFQ

MUR2560

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - 90 ns 10 µA @ 50 V 600 V 25A -55°C ~ 150°C 1.7 V @ 25 A
120SPC045A

120SPC045A

DIODE SCHOTTKY 45V 120A SPD-3A

SMC Diode Solutions
3,726 -

RFQ

120SPC045A

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 4800pF @ 5V, 1MHz - 900 µA @ 45 V 45 V 120A -55°C ~ 150°C 600 mV @ 120 A
JAN1N6626US/TR

JAN1N6626US/TR

RECTIFIER UFR,FRR

Microchip Technology
2,962 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/590 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 40pF @ 10V, 1MHz 30 ns 2 µA @ 220 V 220 V 1.75A -65°C ~ 150°C 1.35 V @ 1.2 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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