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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DHG10I600PADIODE GEN PURP 600V 10A TO220AC IXYS |
3,148 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 15 µA @ 600 V | 600 V | 10A | -55°C ~ 150°C | 2.35 V @ 10 A | |
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1N5288UR-1/TRCURRENT REGULATOR Microchip Technology |
3,351 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/463 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | - | 100 V | 429mA | -65°C ~ 175°C | 1.05 V @ 280.8 mA |
|
VS-HFA25TB60SHM3DIODE GEN PURP 600V 25A TO263AB Vishay General Semiconductor - Diodes Division |
3,310 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101, HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 20 µA @ 600 V | 600 V | 25A | -55°C ~ 150°C | 1.7 V @ 25 A |
|
S70MDIODE GEN PURP 1KV 70A DO5 GeneSiC Semiconductor |
2,498 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1000 V | 70A | -65°C ~ 180°C | 1.1 V @ 70 A | |
|
|
FR6A05DIODE GEN PURP 50V 16A DO4 GeneSiC Semiconductor |
2,560 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 50 V | 50 V | 16A | -65°C ~ 150°C | 1.4 V @ 6 A | |
|
|
JANKCA1N4150SIGNAL/COMPUTER DIODE Microchip Technology |
3,306 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-S-19500/231 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 200mA | -65°C ~ 175°C | 1 V @ 200 mA | |
|
|
VS-20ETF10STRR-M3DIODE GEN PURP 1KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,849 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
1N5297-1E3/TRCURRENT REGULATOR Microchip Technology |
2,329 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 100 V | 1.1A | -65°C ~ 175°C | 1.35 V @ 800 mA | |
|
JAN1N3595-1DIODE GEN PURP 125V 150MA DO35 Microchip Technology |
3,098 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/241 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 3 µs | 1 nA @ 125 V | 125 V | 150mA (DC) | -65°C ~ 175°C | 1 V @ 200 mA |
|
|
S70MRDIODE GEN PURP REV 1KV 70A DO5 GeneSiC Semiconductor |
2,504 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1000 V | 70A | -65°C ~ 180°C | 1.1 V @ 70 A | |
|
|
FR6B05DIODE GEN PURP 100V 16A DO4 GeneSiC Semiconductor |
3,227 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 50 V | 100 V | 16A | -65°C ~ 150°C | 1.4 V @ 6 A | |
|
|
JAN1N6075/TRRECTIFIER UFR,FRR Microchip Technology |
2,620 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 1 µA @ 150 V | 150 V | 3A | -65°C ~ 155°C | 2.04 V @ 9.4 A | |
|
D6015L52TPDIODE GEN PURP 600V 9.5A TO220 Littelfuse Inc. |
3,419 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 4 µs | 10 µA @ 600 V | 600 V | 9.5A | -40°C ~ 125°C | 1.6 V @ 15 A | |
|
1N6630US/TRRECTIFIER UFR,FRR Microchip Technology |
3,237 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 4 µA @ 100 V | 900 V | 1.4A | -65°C ~ 150°C | 1.7 V @ 3 A | ||
|
|
JAN1N3595A-1DIODE GEN PURP 125V 150MA DO35 Microchip Technology |
3,929 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/241 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Through Hole | - | 3 µs | 2 nA @ 125 V | 125 V | 150mA | -65°C ~ 175°C | 920 mV @ 100 mA |
|
|
S70QDIODE GEN PURP 1.2KV 70A DO5 GeneSiC Semiconductor |
3,931 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1200 V | 70A | -65°C ~ 180°C | 1.1 V @ 70 A | |
|
|
FR6D05DIODE GEN PURP 200V 16A DO4 GeneSiC Semiconductor |
3,869 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 25 µA @ 50 V | 200 V | 16A | -65°C ~ 150°C | 1.4 V @ 6 A | |
|
|
JAN1N6074/TRRECTIFIER UFR,FRR Microchip Technology |
3,550 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/503 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 30 ns | 1 µA @ 100 V | 100 V | 3A | -65°C ~ 155°C | 2.04 V @ 9.4 A | |
|
SF3008PTHC0GDIODE GEN PURP 600V 30A TO247AD Taiwan Semiconductor Corporation |
2,144 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 175pF @ 4V, 1MHz | 35 ns | 10 µA @ 600 V | 600 V | 30A | -55°C ~ 150°C | 1.7 V @ 15 A |
|
|
1N5302UR-1CURRENT REGULATOR DIODE Microchip Technology |
2,072 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - |
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