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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
DHG30IM600PC-TRL DIODE GEN PURP 600V 30A TO263 IXYS	3,874	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	50 µA @ 600 V	600 V	30A	-55°C ~ 150°C	2.37 V @ 30 A
S6F DIODE GEN PURP 600V 2A AXIAL Semtech Corporation	3,912	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	27pF @ 5V, 1MHz	250 ns	500 nA @ 600 V	600 V	2A	-65°C ~ 175°C	1.2 V @ 1 A
1N645UR-1/TR SIGNAL/COMPUTER DIODE Microchip Technology	3,939	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	50 nA @ 225 V	225 V	400mA	-65°C ~ 175°C	1 V @ 400 mA
1N6623US DIODE GEN PURP 880V 1A A-MELF Microchip Technology	3,959	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	10pF @ 10V, 1MHz	50 ns	500 nA @ 880 V	880 V	1A	-65°C ~ 150°C	1.55 V @ 1 A
IDW24G65C5BXKSA2 DIODE SCHOTTKY 650V 12A TO247-3 Rochester Electronics, LLC	840	-	RFQ	Ficha técnica	Bulk,Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	360pF @ 1V, 1MHz	0 ns	190 µA @ 650 V	650 V	12A (DC)	-55°C ~ 175°C	1.7 V @ 12 A
JANTX1N6624U DIODE GEN PURP 900V 1A A-MELF Microchip Technology	3,976	-	RFQ		Bulk	Military, MIL-PRF-19500/585	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	50 ns	500 nA @ 900 V	900 V	1A	-65°C ~ 150°C	1.55 V @ 1 A
VS-30EPU12LHN3 DIODE GEN PURP 1.2KV 30A TO247AD Vishay General Semiconductor - Diodes Division	2,004	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	220 ns	145 µA @ 1200 V	1200 V	30A	-55°C ~ 175°C	2.68 V @ 30 A
S4F DIODE GEN PURP 400V 2A AXIAL Semtech Corporation	2,094	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	27pF @ 5V, 1MHz	150 ns	500 nA @ 400 V	400 V	2A	-65°C ~ 175°C	1.95 V @ 2 A
C6D10065Q-TR 10A 650V SIC SCHOTTKY QFN Wolfspeed, Inc.	2,457	-	RFQ		Tape & Reel (TR),Cut Tape (CT),-		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	611pF @ 0V, 1MHz	-	50 µA @ 650 V	650 V	39A (DC)	-55°C ~ 175°C	1.5 V @ 10 A
1N6622E3/TR RECTIFIER UFR,FRR Microchip Technology	2,002	-	RFQ		Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	-	Active	Through Hole	-	30 ns	-	-	-	-	1.6 V @ 2 A
JANTXV1N5550 DIODE GEN PURP 200V 5A AXIAL Microchip Technology	2,641	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/420	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	1 µA @ 200 V	200 V	5A	-65°C ~ 175°C	1.2 V @ 9 A
1N5826 DIODE SCHOTTKY 20V 15A DO5 GeneSiC Semiconductor	3,199	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Chassis, Stud Mount	-	-	10 mA @ 20 V	20 V	15A	-65°C ~ 150°C	440 mV @ 15 A
VS-APH3006HN3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	2,071	-	RFQ	Ficha técnica	Tube	FRED Pt®	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	30 µA @ 600 V	600 V	30A	-65°C ~ 175°C	2.65 V @ 30 A
MUR5010 DIODE GEN PURP 100V 50A DO5 GeneSiC Semiconductor	2,757	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	75 ns	10 µA @ 50 V	100 V	50A	-55°C ~ 150°C	1 V @ 50 A
FFSB0665A DIODE SBD 6A 650V D2PAK-3 onsemi	3,575	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	361pF @ 1V, 100kHz	0 ns	200 µA @ 650 V	650 V	9A (DC)	-55°C ~ 175°C	1.75 V @ 6 A
JANTXV1N5811US/TR RECTIFIER UFR,FRR Microchip Technology	3,602	-	RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 10V, 1MHz	30 ns	5 µA @ 150 V	150 V	3A	-65°C ~ 175°C	875 mV @ 4 A
JANTXV1N5551 DIODE GEN PURP 400V 5A WEC	3,517	-	RFQ	Ficha técnica	Bulk,Bulk	Military, MIL-PRF-19500/420	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	1 µA @ 400 V	400 V	5A	-65°C ~ 175°C	1.2 V @ 9 A
1N5827 DIODE SCHOTTKY 30V 15A DO5 GeneSiC Semiconductor	3,284	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Chassis, Stud Mount	-	-	10 mA @ 20 V	30 V	15A	-65°C ~ 150°C	470 mV @ 15 A
VS-EPH3006HN3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	3,614	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	26 ns	30 µA @ 600 V	600 V	30A	-65°C ~ 175°C	2.65 V @ 30 A
MUR5005 DIODE GEN PURP 50V 50A DO5 GeneSiC Semiconductor	2,219	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	75 ns	10 µA @ 50 V	50 V	50A	-55°C ~ 150°C	1 V @ 50 A